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參數(shù)資料
| 型號(hào)： | ITF87012SVT |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6A, 20V, 0.035 Ohm, N-Channel,2.5V Specified Power MOSFET(6A, 20V, 0.035Ω N溝道2.5V專用功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 6 A, 20 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-193AA |
| 封裝： | PLASTIC, TSOP-6 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 180K |
| 代理商： | ITF87012SVT |
1
TM
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
SABER is a trademark of Analogy Inc., PSPICE is a registered trademark of MicroSim Corporation.
1-888-INTERSIL or 321-724-7143
Intersil and Design is a trademark of Intersil Corporation.
Copyright
Intersil Corporation 2000
File Number
4810.3
ITF87012SVT
6A, 20V, 0.035 Ohm, N-Channel,
2.5V Specified Power MOSFET
Packaging
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.035
,
V
GS
=
4.5V
- r
DS(ON)
= 0.038
,
V
GS
=
4.0V
- r
DS(ON)
= 0.045
,
V
GS
=
2.5V
2.5 V Gate Drive Capability
Small Profile Package
Gate to Source Protection Diode
Simulation Models
- Temperature Compensated PSPICE and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
Peak Current vs Pulse Width Curve
Transient Thermal Impedance Curve vs Board Mounting
Area
Switching Time vs R
GS
Curves
Ordering Information
TSOP-6
1
2
3
4
DRAIN(1)
DRAIN(6)
DRAIN(5)
SOURCE(4)
DRAIN(2)
GATE(3)
PART NUMBER
PACKAGE
BRAND
ITF87012SVT
TSOP-6 (SC-95)
012
NOTE: When ordering, use the entire part number. ITF87012SVT is
available only in tape and reel.
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
ITF87012SVT
20
20
±1
2
UNITS
V
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 4.5V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 25
o
C, V
GS
= 4.0V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 4.0V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 2.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief TB370. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 125
o
C.
2. 62.5
o
C/W measured using FR-4 board with 0.40 in
2
(258.1 mm
2
) copper pad at 2 second
.
6.0
5.5
3.5
3.0
Figure 4
2
16
-55 to 150
A
A
A
A
A
W
mW/
o
C
o
C
300
260
o
C
o
C
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Data Sheet
July 2000
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