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參數(shù)資料
| 型號(hào)： | ITF87072DK8T |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6A, 20V, 0.037 Ohm, Dual P-Channel,2.5V Specified Power MOSFET(6A, 20V, 0.037Ω雙組 P溝道2.5V專用功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 20 V, 0.059 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁(yè)數(shù)： | 1/13頁(yè) |
| 文件大?。?/td> | 175K |
| 代理商： | ITF87072DK8T |
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1
TM
File Number
4812.3
ITF87072DK8T
6A, 20V, 0.037 Ohm, Dual P-Channel,
2.5V Specified Power MOSFET
Packaging
SO8 (JEDEC MS-012AA)
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.037
,
V
GS
=
4.5V
- r
DS(ON)
= 0.039
,
V
GS
=
4.0V
- r
DS(ON)
= 0.059
,
V
GS
=
2.5V
Gate to Source Protection Diode
Simulation Models
- Temperature Compensated PSPICE and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
Peak Current vs Pulse Width Curve
Transient Thermal Impedance Curve vs Board Mounting
Area
Switching Time vs R
GS
Curve
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
BRANDING DASH
1
2
3
4
5
GATE1(2)
DRAIN1(8)
DRAIN1(7)
SOURCE1(1)
DRAIN2(6)
DRAIN2(5)
SOURCE2(3)
GATE2(4)
Ordering Information
PART NUMBER
PACKAGE
BRAND
ITF87072DK8T
SO8
87072
NOTE: When ordering, use the entire part number. ITF87072DK8T
is available only in tape and reel.
ITF87072DK8T
-20
-20
±
12
UNITS
V
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= -4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 25
o
C, V
GS
= -4.0V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= -4.0V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= -2.5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Technical Brief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
6.0
6.0
1.5
1.5
Figure 4
2.5
20
-55 to 150
A
A
A
A
W
mW/
o
C
o
C
300
260
o
C
o
C
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. T
J
= 25
o
C to 125
o
C.
2. 50
o
C/W measured using FR-4 board with 0.14 in
2
(90.3 mm
2
) copper pad at 1 second.
3. 228
o
C/W measured using FR-4 board with 0.006 in
2
(3.9 mm
2
) copper pad at 1000 second.
Data Sheet
March 2000
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
SABER is a Copyright of Analogy Inc. , PSPICE is a registered trademark of MicroSim Corporation.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Corporation.
|
Copyright
Intersil Corporation 2000
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