參數(shù)資料
型號： ITF87072DK8T
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 6A, 20V, 0.037 Ohm, Dual P-Channel,2.5V Specified Power MOSFET(6A, 20V, 0.037Ω雙組 P溝道2.5V專用功率MOS場效應管)
中文描述： 20 V, 0.059 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： PLASTIC, SO-8
文件頁數(shù)： 2/13頁
文件大?。?/td> 175K
代理商： ITF87072DK8T
2
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V Figure 11
-20
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -20V, V
GS
= 0V
-
-
-1
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
12V
-
-
±
10
uA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A Figure 10
-0.5
-
-1.5
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 6.0A, V
GS
= -4.5V Figures 8, 9
-
0.028
0.037
I
D
= 1.5A, V
GS
= -4.0V Figure 8
-
0.030
0.039
I
D
= 1.5A, V
GS
= -2.5V Figure 8
-
0.044
0.059
THERMAL SPECIFICATIONS
Thermal Resistance Junction to
Ambient
R
θ
JA
Pad Area = 0.14 in
2
(90.3 mm
2
) (Note 2)
-
-
50
o
C/W
Pad Area = 0.027 in
2
(17.4 mm
2
) Figure 20
-
-
191
o
C/W
Pad Area = 0.006 in
2
(3.9 mm
2
) Figure 20
-
-
228
o
C/W
SWITCHING SPECIFICATIONS
(V
GS
= -2.5V)
Turn-On Delay Time
t
d(ON)
V
DD
= -10V, I
D
= 1.5A
V
GS
=
-2.5V,
R
GS
= 10
Figures 14, 18, 19
-
13
-
ns
Rise Time
t
r
-
85
-
ns
Turn-Off Delay Time
t
d(OFF)
-
55
-
ns
Fall Time
t
f
-
62
-
ns
SWITCHING SPECIFICATIONS
(V
GS
= -4.5V)
Turn-On Delay Time
t
d(ON)
V
DD
= -10V, I
D
= 6.0A
V
GS
=
-4.5V,
R
GS
= 10
Figures 15, 18, 19
-
9
-
ns
Rise Time
t
r
-
72
-
ns
Turn-Off Delay Time
t
d(OFF)
-
81
-
ns
Fall Time
t
f
-
82
-
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to -4.5V
V
DD
= -10V,
I
D
= 6.0A,
I
g(REF)
= 1.0mA
Figures 13, 16, 17
-
12
-
nC
Gate Charge at -2V
Q
g(-2)
V
GS
= 0V to -2V
-
6
-
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to -0.5V
-
0.7
-
nC
Gate to Source Gate Charge
Q
gs
-
2.5
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
3.5
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= -10V, V
GS
= 0V,
f = 1MHz
Figure 12
-
1200
-
pF
Output Capacitance
C
OSS
-
325
-
pF
Reverse Transfer Capacitance
C
RSS
-
130
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= -6.0A
-
-0.85
-
V
Reverse Recovery Time
t
rr
I
SD
= -6.0A, dI
SD
/dt = 100A/
μ
s
-
24
-
ns
Reverse Recovered Charge
Q
RR
I
SD
= -6.0A, dI
SD
/dt = 100A/
μ
s
-
17
-
nC
ITF87072DK8T
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