參數(shù)資料
型號： ITF87072DK8T
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 6A, 20V, 0.037 Ohm, Dual P-Channel,2.5V Specified Power MOSFET(6A, 20V, 0.037Ω雙組 P溝道2.5V專用功率MOS場效應(yīng)管)
中文描述： 20 V, 0.059 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： PLASTIC, SO-8
文件頁數(shù)： 4/13頁
文件大?。?/td> 175K
代理商： ITF87072DK8T
4
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. TRANSFER CHARACTERISTICS
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
-1
-10
-100
-1
-10
-200
-50
100
μ
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
A
= 25
o
C
R
θ
JA
= 228
o
C/W
SINGLE PULSE
LIMITED BY r
DS(ON)
AREA MAY BE
-0
-5
-10
-15
-20
-25
-1.0
-1.5
-2.0
-2.5
-3.0
I
D
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= -55
o
C
0
-5
-10
-15
-20
-25
0
-0.5
-1.0
-1.5
-2.0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -1.5V
T
A
= 25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -2.5V
V
GS
= -2V
V
GS
= -4.5V
V
GS
= -3V
20
40
60
80
-1
-2
-3
-4
-5
I
D
= -1.5A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= -6A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.6
0.8
1.0
1.2
1.4
1.6
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= -4.5V, I
D
= -6A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.4
0.6
0.8
1.0
1.2
1.4
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= -250
μ
A
T
ITF87072DK8T
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