參數(shù)資料
型號(hào)： ITF87072DK8T
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 6A, 20V, 0.037 Ohm, Dual P-Channel,2.5V Specified Power MOSFET(6A, 20V, 0.037Ω雙組 P溝道2.5V專用功率MOS場效應(yīng)管)
中文描述： 20 V, 0.059 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： PLASTIC, SO-8
文件頁數(shù)： 5/13頁
文件大?。?/td> 175K
代理商： ITF87072DK8T
5
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 14. SWITCHING TIME vs GATE RESISTANCE
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= -250
μ
A
100
1000
-0.1
-1
-10
2000
-20
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
= C
GD
0
-1
-2
-3
-4
-5
0
3
6
9
12
15
V
G
,
V
DD
= -10V
Q
g
, GATE CHARGE (nC)
I
D
= -6A
I
D
= -1.5A
WAVEFORMS IN
DESCENDING ORDER:
0
50
100
150
200
0
10
R
GS
, GATE TO SOURCE RESISTANCE (
)
20
30
40
50
S
V
GS
= -2.5V, V
DD
= -10V, I
D
= -1.5A
t
d(OFF)
t
r
t
f
t
d(ON)
0
50
100
150
200
0
10
20
30
40
50
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= -4.5V, V
DD
= -10V, I
D
= -6A
t
d(OFF)
t
r
t
f
t
d(ON)
ITF87072DK8T
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