參數(shù)資料
型號(hào)： ITF87012SVT
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 6A, 20V, 0.035 Ohm, N-Channel,2.5V Specified Power MOSFET(6A, 20V, 0.035Ω N溝道2.5V專用功率MOS場(chǎng)效應(yīng)管)
中文描述： 6 A, 20 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-193AA
封裝： PLASTIC, TSOP-6
文件頁(yè)數(shù)： 2/12頁(yè)
文件大?。?/td> 180K
代理商： ITF87012SVT
2
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
20
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20V, V
GS
= 0V
-
-
10
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±1
2V
-
-
±
10
uA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
0.5
-
1.5
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 6.0A, V
GS
= 4.5V (Figures 8, 9)
-
0.028
0.035
I
D
= 3.5A, V
GS
= 4.0V (Figure 8)
-
0.029
0.038
I
D
= 3.0A, V
GS
= 2.5V (Figure 8)
-
0.037
0.045
THERMAL SPECIFICATIONS
Thermal Resistance Junction to
Ambient
R
θ
JA
Pad Area = 0.40 in
2
(258.1 mm
2
) (Note 2)
-
-
62.5
o
C/W
Pad Area = 0.0163 in
2
(10.54 mm
2
) (Figure 20)
-
-
198.2
o
C/W
Pad Area = 0.0056 in
2
(3.60 mm
2
) (Figure 20)
-
-
218.4
o
C/W
SWITCHING SPECIFICATIONS
(V
GS
= 2.5V)
Turn-On Delay Time
t
d(ON)
V
DD
= 10V, I
D
= 3.0A
V
GS
=
2.5V,
R
GS
= 15
(Figures 14, 18, 19)
-
79
-
ns
Rise Time
t
r
-
315
-
ns
Turn-Off Delay Time
t
d(OFF)
-
154
-
ns
Fall Time
t
f
-
188
-
ns
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Delay Time
t
d(ON)
V
DD
= 10V, I
D
= 6.0A
V
GS
=
4.5V,
R
GS
= 16
(Figures 15, 18, 19)
-
42
-
ns
Rise Time
t
r
-
142
-
ns
Turn-Off Delay Time
t
d(OFF)
-
236
-
ns
Fall Time
t
f
-
200
-
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 4.5V
V
DD
= 10V,
I
D
= 5.5A,
I
g(REF)
= 1.0mA
(Figures 13, 16, 17)
-
7.7
-
nC
Gate Charge at 2V
Q
g(2)
V
GS
= 0V to 2V
-
4.0
-
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 0.5V
-
0.30
-
nC
Gate to Source Gate Charge
Q
gs
-
1.1
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
2.7
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 10V, V
GS
= 0V,
f = 1MHz
(Figure 12)
-
655
-
pF
Output Capacitance
C
OSS
-
227
-
pF
Reverse Transfer Capacitance
C
RSS
-
118
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 5.5A
-
0.84
-
V
Reverse Recovery Time
t
rr
I
SD
= 5.5A, dI
SD
/dt = 50A/
μ
s
-
22
-
ns
Reverse Recovered Charge
Q
RR
I
SD
= 5.5A, dI
SD
/dt = 50A/
μ
s
-
6.1
-
nC
ITF87012SVT
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