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參數(shù)資料
| 型號： | ITF87012SVT |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6A, 20V, 0.035 Ohm, N-Channel,2.5V Specified Power MOSFET(6A, 20V, 0.035Ω N溝道2.5V專用功率MOS場效應(yīng)管) |
| 中文描述： | 6 A, 20 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-193AA |
| 封裝： | PLASTIC, TSOP-6 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 180K |
| 代理商： | ITF87012SVT |
8
PSPICE Electrical Model
.SUBCKT ITF87012SVT 2 1 3 ;
REV 25 Jan 2000
CA 12 8 11.00e-10
CB 15 14 9.50e-10
CIN 6 8 5.25e-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DESD1 91 9 DESD1MOD
DESD2 91 7 DESD2MOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 27.41
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.00e-9
LGATE 1 9 1.04e-9
LSOURCE 3 7 1.29e-10
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 2.00e-3
RGATE 9 20 118
RLDRAIN 2 5 10
RLGATE 1 9 9 10.4
RLSOURCE 3 7 1.29
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 17.00e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*175),2))}
.MODEL DBODYMOD D (IS = 3.48e-11 IKF = 0.15 XT I= 0.18 RS = 1.47e-2 TRS1 = 1.25e-3 TRS2 = 0 CJO = 3.67e-10 TT = 2.20e-8 M = 0.52)
.MODEL DBREAKMOD D (RS = 9.52e-2 TRS1 = 1.05e-3 TRS2 = 1.13e-6)
.MODEL DESD1MOD D (BV = 8.2 Tbv1= -1.87e-3 N= 12 RS = 20)
.MODEL DESD2MOD D (BV = 11.5 Tbv1= -2.01e-3 N= 8 RS = 20)
.MODEL DPLCAPMOD D (CJO = 4.91e-10 IS = 1e-30 M = 0.59)
.MODEL MMEDMOD NMOS (VTO = 1.10 KP = 2.60 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 118)
.MODEL MSTROMOD NMOS (VTO = 1.29 KP = 58 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 0.86 KP = 0.10 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1180 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 7.58e-4 TC2 = -1.43e-6)
.MODEL RDRAINMOD RES (TC1 = 2.21e-2 TC2 = 2.72e-5)
.MODEL RSLCMOD RES (TC1 = 1.21e-3 TC2 = 1.00e-5)
.MODEL RSOURCEMOD RES (TC1 = 1.00e-3 TC2 = 0)
.MODEL RVTHRESMOD RES (TC1 = -2.01e-3 TC2 = -1.01e-6)
.MODEL RVTEMPMOD RES (TC1 = -8.40e-4 TC2 = 0)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.5 VOFF= -3.0)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.0 VOFF= -3.5)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.5 VOFF= 0)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0 VOFF= -1.5)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
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6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
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RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
16
EVTHRES
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
18
22
9
ESG
LGATE
RLGATE
20
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-
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DESD1
91
DESD2
6
ITF87012SVT
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