參數(shù)資料
型號: ITF86182SK8T
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET
中文描述: 30 V, 0.0175 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝: PLASTIC, SO-8
文件頁數(shù): 5/12頁
文件大?。?/td> 174K
代理商: ITF86182SK8T
5
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 14. SWITCHING TIME vs GATE RESISTANCE
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
0.90
0.95
1.0
1.05
1.10
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= -250
μ
A
1000
-0.1
-1
-10
5000
300
-30
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
-2
-4
-6
-8
-10
0
15
30
45
60
75
V
G
,
V
DD
= -15V
Q
g
, GATE CHARGE (nC)
I
D
= -11A
I
D
= -2A
WAVEFORMS IN
DESCENDING ORDER:
0
100
200
300
0
10
20
30
40
50
400
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= -4.5V, V
DD
= -15V, I
D
= -6A
t
d(OFF)
t
r
t
f
t
d(ON)
0
100
200
300
400
500
0
10
20
30
40
50
S
R
GS
, GATE TO SOURCE RESISTANCE (
W
)
V
GS
= -10V, V
DD
= -15V, I
D
= -11A
t
d(OFF)
t
r
t
d(ON)
t
f
ITF86182SK8T
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