參數(shù)資料
型號(hào)： ITF86182SK8T
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET
中文描述： 30 V, 0.0175 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： PLASTIC, SO-8
文件頁(yè)數(shù)： 1/12頁(yè)
文件大?。?/td> 174K
代理商： ITF86182SK8T
1
File Number
4797.2
ITF86182SK8T
11A, 30V, 0.0115 Ohm, P-Channel, Logic
Level, Power MOSFET
Packaging
SO8 (JEDEC MS-012AA)
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.0115
,
V
GS
=
10V
- r
DS(ON)
= 0.016
,
V
GS
=
4.5V
- r
DS(ON)
= 0.0175
,
V
GS
=
4V
Gate to Source Protection Diode
Simulation Models
- Temperature Compensated PSPICE and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
Peak Current vs Pulse Width Curve
Transient Thermal Impedance Curve vs Board Mounting
Area
Switching Time vs R
GS
Curves
BRANDING DASH
1
2
3
4
5
SOURCE(2)
DRAIN(8)
SOURCE(1)
DRAIN(7)
DRAIN(6)
DRAIN(5)
SOURCE(3)
GATE(4)
Ordering Information
PART NUMBER
PACKAGE
BRAND
ITF86182SK8T
SO8
86182
NOTE: When ordering, use the entire part number. ITF86182SK8T
is available only in tape and reel.
ITF86182SK8T
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 25
o
C, V
GS
= 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 4.0V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-30
V
-30
V
±
20
V
-11.0
-9.0
-6.0
-6.0
Figure 4
A
A
A
A
2.5
20
W
mW/
o
C
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Tech brief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
-55 to 150
300
260
o
C
o
C
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. T
J
= 25
o
C to 125
o
C.
2. 50
o
C/W measured using FR-4 board with 0.76 in
2
(490.3 mm
2
) copper pad at 10 second.
Data Sheet
January 2000
[ /Title
(ITF86
182SK
8T)
/Sub-
ject
(11A,
30V,
0.0115
Ohm,
P-
Chan-
nel,
Logic
Level,
Power
MOS-
FET)
/Author
()
/Key-
words
(Inter-
sil,
Semi-
conduc-
tor, P-
Chan-
nel,
Logic
Level
Power
MOS-
FET,
SO8)
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
SABER is a Copyright of Analogy Inc.http://www.intersil.com or 321-727-9207
|
Copyright
Intersil Corporation 2000
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