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參數(shù)資料
| 型號(hào)： | ITF86182SK8T |
| 廠商： | INTERSIL CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET |
| 中文描述： | 30 V, 0.0175 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 174K |
| 代理商： | ITF86182SK8T |
3
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
-3
-6
-9
-12
25
50
75
100
120
150
I
D
,
T
A
, AMBIENT TEMPERATURE (
o
C)
V
GS
= -4.0V, R
θ
JA
= 189
o
C/W
V
GS
= -10V, R
θ
JA
= 50
o
C/W
0.001
0.01
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
3
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.1
0.05
0.02
0.01
R
θ
JA
= 50
o
C/W
-10
-100
-1000
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
-5
I
D
,
t, PULSE WIDTH (s)
V
GS
= -4.5V
R
θ
JA
= 50
o
C/W
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
150 - T
A
125
ITF86182SK8T
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