參數(shù)資料
型號(hào)： ITF86130SK8T
廠商： INTERSIL CORP
元件分類(lèi)： 功率晶體管
英文描述： N-Channel, Logic Level, Power MOSFET(N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管)
中文描述： 14 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： PLASTIC, SO-8
文件頁(yè)數(shù)： 8/12頁(yè)
文件大小： 174K
代理商： ITF86130SK8T
8
PSPICE Electrical Model
.SUBCKT ITF86130SK8T 2 1 3 ;
REV 23 Nov 1999
CA 12 8 2.00e-9
CB 15 14 2.15e-9
CIN 6 8 2.70e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DESD1 91 9 DESD1MOD
DESD2 91 7DESD2MOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 37.19
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 1.04e-9
LSOURCE 3 7 1.29e-10
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 3.50e-4
RGATE 9 20 1.13
RLDRAIN 2 5 10
RLGATE 1 9 9 10.4
RLSOURCE 3 7 1.29
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 4.55e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*650),2))}
.MODEL DBODYMOD D (IS = 4.33e-12 RS = 3.91e-3 TRS1 = 1.01e-3 TRS2 = 1.11e-6 CJO = 2.02e-9 TT = 3.02e-8 M = 0.50)
.MODEL DBREAKMOD D (RS = 1.08e-1 TRS1 = 1.01e-3 TRS2 = 1.04e-7)
.MODEL DESD1MOD D (BV = 16.4 Tbv1= -2.50e-3 N= 21 RS = 100)
.MODEL DESD2MOD D (BV = 16.1 Tbv1= -2.50e-3 N= 21 RS = 100)
.MODEL DPLCAPMOD D (CJO = 1.35e-9 IS = 1e-30 M = 0.50)
.MODEL MMEDMOD NMOS (VTO = 2.28 KP = 10.00 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.13)
.MODEL MSTROMOD NMOS (VTO = 2.65 KP = 275 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.92 KP = 0.10 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 11.3 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 9.98e-4 TC2 = 1.01e-7)
.MODEL RDRAINMOD RES (TC1 = 3.78e-2 TC2 = 4.99e-5)
.MODEL RSLCMOD RES (TC1 = 4.07e-3 TC2 = 2.25e-5)
.MODEL RSOURCEMOD RES (TC1 = 1.00e-3 TC2 = 0)
.MODEL RVTHRESMOD RES (TC1 = -2.79e-3 TC2 = -9.65e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.90e-3 TC2 = 0)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.0 VOFF= -0.6)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.6 VOFF= -4.0)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.5 VOFF= 0)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0 VOFF= -0.5)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
16
EVTHRES
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
18
22
9
ESG
LGATE
RLGATE
20
+
-
+
DESD1
91
DESD2
6
ITF86130SK8T
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