參數(shù)資料
型號(hào)： ITF86130SK8T
廠(chǎng)商： INTERSIL CORP
元件分類(lèi)： 功率晶體管
英文描述： N-Channel, Logic Level, Power MOSFET(N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管)
中文描述： 14 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： PLASTIC, SO-8
文件頁(yè)數(shù)： 2/12頁(yè)
文件大?。?/td> 174K
代理商： ITF86130SK8T
2
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
30
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30V, V
GS
= 0V
-
-
10
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
10
uA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
1.5
-
2.5
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 14.0A, V
GS
= 10V (Figures 8, 9)
-
0.0058
0.0078
I
D
= 7.0A, V
GS
= 4.5V (Figure 8)
-
0.007
0.010
I
D
= 7.0A, V
GS
= 4.0V (Figure 8)
-
0.008
0.012
THERMAL SPECIFICATIONS
Thermal Resistance Junction to
Ambient
R
θ
JA
Pad Area = 0.76 in
2
(490.3 mm
2
) (Note 2)
-
-
50
o
C/W
Pad Area = 0.054 in
2
(34.8 mm
2
) (Figure 20)
-
-
152
o
C/W
Pad Area = 0.0115 in
2
(7.42 mm
2
) (Figure 20)
-
-
189
o
C/W
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Delay Time
t
d(ON)
V
DD
= 15V, I
D
= 7.0A,V
GS
=
4.5V,
R
GS
= 4.7
(Figures 14, 18, 19)
-
23
-
ns
Rise Time
t
r
-
84
-
ns
Turn-Off Delay Time
t
d(OFF)
-
33
-
ns
Fall Time
t
f
-
42
-
ns
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Delay Time
t
d(ON)
V
DD
= 15V, I
D
= 14.0A, V
GS
=
10V,
R
GS
= 5.1
(Figures 15, 18, 19)
-
14
-
ns
Rise Time
t
r
-
106
-
ns
Turn-Off Delay Time
t
d(OFF)
-
49
-
ns
Fall Time
t
f
-
69
-
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 15V,
I
D
= 12.0A,
I
g(REF)
= 1.0mA,
(Figures 13, 16, 17)
-
58
84
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
31.5
-
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
3
-
nC
Gate to Source Gate Charge
Q
gs
-
9.5
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
12
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
-
3050
-
pF
Output Capacitance
C
OSS
-
675
-
pF
Reverse Transfer Capacitance
C
RSS
-
285
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 12.0A
-
0.79
-
V
Reverse Recovery Time
t
rr
I
SD
= 12.0A, dI
SD
/dt = 100A/
μ
s
-
33
-
ns
Reverse Recovered Charge
Q
RR
I
SD
= 12.0A, dI
SD
/dt = 100A/
μ
s
-
32
-
nC
ITF86130SK8T
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