- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383185 > ITF86130SK8T (INTERSIL CORP) N-Channel, Logic Level, Power MOSFET(N溝道邏輯電平功率MOS場效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號： | ITF86130SK8T |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel, Logic Level, Power MOSFET(N溝道邏輯電平功率MOS場效應(yīng)管) |
| 中文描述： | 14 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 174K |
| 代理商： | ITF86130SK8T |
7
thermal model or manually utilizing the normalized maximum
transient thermal impedance curve.
Displayed on the curve are R
θ
JA
values listed in the
Electrical Specifications table. The points were chosen to
depict the compromise between the copper board area, the
thermal resistance and ultimately the power dissipation,
P
DM
.
Thermal resistances corresponding to other copper areas
can be obtained from Figure 20 or by calculation using
Equation 2. R
θ
JA
is defined as the natural log of the area
times a coefficient added to a constant. The area, in square
inches is the top copper area including the gate and source
pads.
The transient thermal impedance (Z
θ
JA
) is also effected by
varied top copper board area. Figure 21 shows the effect of
copper pad area on single pulse transient thermal
impedance. Each trace represents a copper pad area in
square inches corresponding to the descending list in the
graph. Spice and SABER thermal models are provided for
each of the listed pad areas.
Copper pad area has no perceivable effect on transient
thermal impedance for pulse widths less than 100ms. For
pulse widths less than 100ms the transient thermal
impedance is determined by the die and package. Therefore,
CTHERM1 through CTHERM5 and RTHERM1 through
RTHERM5 remain constant for each of the thermal models.
A listing of the model component values is available in
Table 1.
(EQ. 2)
R
θ
JA
83.2
23.6
Area
(
)
ln
×
–
=
FIGURE 20. THERMAL RESISTANCE vs MOUNTING PAD AREA
120
160
200
240
0.1
1.0
80
0.01
R
θ
JA
= 83.2 - 23.6 *
ln
(AREA)
152
o
C/W - 0.054in
2
189
o
C/W - 0.0115in
2
θ
J
(
o
C
AREA, TOP COPPER AREA (in
2
)
FIGURE 21. THERMAL IMPEDANCE vs MOUNTING PAD AREA
30
60
90
120
150
0
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
COPPER BOARD AREA - DESCENDING ORDER
0.04 in
0.28 in
2
0.52 in
2
0.76 in
2
1.00 in
2
I
o
C
ITF86130SK8T
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ITF86182SK8T | 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET |
| ITF87012SVT | 6A, 20V, 0.035 Ohm, N-Channel,2.5V Specified Power MOSFET(6A, 20V, 0.035Ω N溝道2.5V專用功率MOS場效應(yīng)管) |
| ITF87056DQT | 5A, 20V, 0.045 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET |
| ITF87072DK8T | 6A, 20V, 0.037 Ohm, Dual P-Channel,2.5V Specified Power MOSFET(6A, 20V, 0.037Ω雙組 P溝道2.5V專用功率MOS場效應(yīng)管) |
| ITM-1602CSTL | ITM-1602CSTL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ITF86172SK8T | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET |
| ITF86174SQT | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:9A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET |
| ITF86182SK8T | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET |
| ITF87008DQT | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:7.0A, 20V, 0.023 Ohm, Dual N-Channel, 2.5V Specified Power MOSFET |
| ITF87012SVT | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6A, 20V, 0.035 Ohm, N-Channel, 2.5V Specified Power MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。