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參數(shù)資料
| 型號： | IS62WV51216BLL-70XI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| 中文描述： | 512K X 16 STANDARD SRAM, 70 ns, UUC |
| 封裝： | DIE |
| 文件頁數(shù)： | 4/16頁 |
| 文件大?。?/td> | 137K |
| 代理商： | IS62WV51216BLL-70XI |
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
02/24/05
IS62WV51216ALL, IS62WV51216BLL
ISSI
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
V
DD
Min.
Max.
Unit
V
OH
Output HIGH Voltage
I
OH
= -0.1 mA
I
OH
= -1 mA
1.65-2.2V
2.5-3.6V
1.4
2.2
—
—
V
V
V
OL
Output LOW Voltage
I
OL
= 0.1 mA
I
OL
= 2.1 mA
1.65-2.2V
2.5-3.6V
—
—
0.2
0.4
V
V
V
IH
Input HIGH Voltage
1.65-2.2V
2.5-3.6V
1.4
2.2
V
DD
+ 0.2
V
DD
+ 0.3
V
V
V
IL(1)
Input LOW Voltage
1.65-2.2V
2.5-3.6V
–0.2
–0.2
0.4
0.6
V
V
I
LI
Input Leakage
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
–1
1
μA
I
LO
Output Leakage
–1
1
μA
Notes:
1. V
IL
(min.) = –1.0V for pulse width less than 10 ns.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
V
DD
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
V
DD
Related to GND
Storage Temperature
Power Dissipation
Value
Unit
V
°C
V
°C
W
–0.2 to V
DD
+0.3
–40 to +85
–0.2 to +3.8
–65 to +150
1.0
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
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| IS62WV5128BLL-70T2 | 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV5128BLL-70TI | 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV5128ALL | 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV5128ALL-70H | 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV5128ALL-70HI | 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS62WV51216EBLL-45BLI | 功能描述:IC SRAM 8MB LP 45NS 48MBGA 制造商:issi, integrated silicon solution inc 系列:- 包裝:托盤 零件狀態(tài):有效 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:8M（512K x 16） 速度:45ns 接口:并聯(lián) 電壓 - 電源:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 封裝/外殼:48-VFBGA 供應(yīng)商器件封裝:48-VFBGA（6x8） 標(biāo)準(zhǔn)包裝:480 |
| IS62WV51216EBLL-45TLI | 功能描述:IC SRAM 8MB LP 45NS 44TSOP 制造商:issi, integrated silicon solution inc 系列:- 包裝:管件 零件狀態(tài):有效 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:8M（512K x 16） 速度:45ns 接口:并聯(lián) 電壓 - 電源:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 封裝/外殼:44-TSOP（0.400"，10.16mm 寬） 供應(yīng)商器件封裝:44-TSOP II 標(biāo)準(zhǔn)包裝:135 |
| IS62WV5128ALL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV5128ALL-70BI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV5128ALL-70H | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
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