參數(shù)資料
型號(hào)： IS42S83200A
廠商： Integrated Silicon Solution, Inc.
英文描述： 256 Mb Synchronous DRAM
中文描述： 256 MB的同步DRAM
文件頁(yè)數(shù)： 5/49頁(yè)
文件大?。?/td> 603K
代理商： IS42S83200A
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. D
11/01/05
5
ISSI
IS42S83200A
(4-bank x 8,388,608 - word x 8-bit)
IS42S16160A
(4-bank x 4,194,304 - word x 16-bit)
BASIC FUNCTIONS
The
IS42S83200A/16160A
provides basic
functions,
bank (row) activate, burst read / write, bank (row)
precharge,
and auto / self refresh.
Each command is defined by control signals of /RAS,
CLK
/CAS and
/WE at CLK rising edge. In addition to 3 signals,
/CS,
CKE and A10 are used as chip select, refresh opt ion,
and precharge option, respectively .
To know the detailed definition of commands,
please see the command truth table.
/CS
Chip Select : L=select, H=deselect
/RAS
Command
/CAS
Command
define basic command
/WE
Command
CKE
Refresh Option @ refresh command
A10
Precharge Option @ precharge or read/write command
Activate (ACT) [/RAS =L, /CAS =/WE =H]
ACT command activates a row in an idle bank indicated by BA.
Read (READ) [/RAS =H, /CAS =L, /WE =H]
READ command starts burst read from the active bank indicated by BA.
First output data appears after /CAS latency. When A10 =H at this command,
the bank is deactivated after the burst read (auto-precharge,
READA
).
Write (WRITE) [/RAS =H, /CAS =/WE =L]
WRITE command starts burst write to the active bank indicated by BA. Total
data length to be written is set by burst length. When A10 =H at this command,
the bank is deactivated after the burst write (auto-precharge,
WRITEA
).
Precharge (PRE) [/RAS =L, /CAS =H, /WE =L]
PRE command deactivates the active bank indicated by BA. This com-
mand also terminates burst read / write operation. When A10 =H at this
command, all banks are deactivated (precharge all,
PREA
).
Auto-Refresh (REFA) [/RAS =/CAS =L, /WE =CKE =H]
REFA command starts auto-refresh cycle. Refresh address including bank
address are generated internally. After this command, the banks are
precharged automatically.
相關(guān)PDF資料
PDF描述
IS42S83200A-75T 256 Mb Synchronous DRAM
IS42S83200A-75TL 256 Mb Synchronous DRAM
IS42VS16100C1-10TLI 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16100C1-10T 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S83200A-75T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256 Mb Synchronous DRAM
IS42S83200A-75TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256 Mb Synchronous DRAM
IS42S83200B 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256-MBIT SYNCHRONOUS DRAM
IS42S83200B-6T 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M 3.3v 32Mx8 166MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S83200B-6TL 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M 3.3v 32Mx8 166MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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