參數(shù)資料
型號(hào)： IS42S83200A
廠商： Integrated Silicon Solution, Inc.
英文描述： 256 Mb Synchronous DRAM
中文描述： 256 MB的同步DRAM
文件頁數(shù)： 1/49頁
文件大?。?/td> 603K
代理商： IS42S83200A
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. D
11/01/05
1
ISSI
IS42S83200A
(4-bank x 8,388,608 - word x 8-bit)
IS42S16160A
(4-bank x 4,194,304 - word x 16-bit)
256 Mb Synchronous DRAM
DESCRIPTION
IS42S83200A is a synchronous
256
Mb SDRAM and is
organized as 4-bank x 8,388,608-word x 8-bit; and
IS42S16160A is organized as 4-bank x 4,194,304-word x
16
-bit
.
All inputs and outputs are referencedto the rising
edge of CLK.
FEATURES
IS42S83200A
and
IS42S16160A
achieve very
high speed clock rates
up to 166MHz,
and are
suitable for main memories or
graphic
memories in computer systems.
- Single 3.3V ±0.3V power supply
- Max. Clock frequency:
-6:166MHz<3-3-3>
-7:143MHz<3-3-3>
-7
5
:1
3
3MHz<3-3-3>
- Fully synchronous operation referenced to clock rising edge
- 4-bank operation controlled by BA0,BA1(Bank Address)
- /CAS latency- 2/3 (programmable)
- Burst length- 1/2/4/8/FP (programmable)
- Burst type- Sequential and interleave burst (programmable)
- Byte Control- DQML and DQMU (
IS42S16160A
)
- Random column access
- Auto precharge / All bank precharge controlled by A10
- Auto and self refresh
- 8192 refresh cycles /64ms(4 banks concurrent refresh)
- LVTTL Interface
- Row address A0-12 /Column address A0-9(x8) / A0-8(x16)
- Package
: 400-mil, 54-pin Thin Small Outline (TSOP II) with 0.8mm lead pitch
-
Lead-free available
ITEM
-6
-
-7
-
-75
10
7.5
45
20
Unit
ns
ns
ns
ns
ns
ns
ns
tCLK
Clock Cycle Time
(Min.)
CL=2
CL=3
6
7
tRAS
tRCD
Active to Precharge Command Period (Min.)
Row to Column Delay
42
15
-
5
60
45
20
-
(Min.)
tAC
Access Time from CLK
(Max.)
CL=2
CL=3
5.4
63
5.4
67.5
tRC
Ref /Active Command Period
(Min.)
Icc1
Operation Current (Single Bank)
(Max.)
IS42S83200A
110
mA
IS42S16160A
130
130
mA
Icc6
Self Refresh Current
(Max.) -6,-7,-75
3
3
mA
6
3
IS42S83200A/16160A
-
-
-
相關(guān)PDF資料
PDF描述
IS42S83200A-75T 256 Mb Synchronous DRAM
IS42S83200A-75TL 256 Mb Synchronous DRAM
IS42VS16100C1-10TLI 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16100C1-10T 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S83200A-75T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256 Mb Synchronous DRAM
IS42S83200A-75TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256 Mb Synchronous DRAM
IS42S83200B 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256-MBIT SYNCHRONOUS DRAM
IS42S83200B-6T 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M 3.3v 32Mx8 166MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S83200B-6TL 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M 3.3v 32Mx8 166MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*