- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377552 > IS42S83200A (Integrated Silicon Solution, Inc.) 256 Mb Synchronous DRAM PDF資料下載
參數(shù)資料
| 型號： | IS42S83200A |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 256 Mb Synchronous DRAM |
| 中文描述： | 256 MB的同步DRAM |
| 文件頁數(shù)： | 4/49頁 |
| 文件大?。?/td> | 603K |
| 代理商： | IS42S83200A |
第1頁第2頁第3頁當前第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. D
11/01/05
ISSI
IS42S83200A
(4-bank x 8,388,608 - word x 8-bit)
IS42S16160A
(4-bank x 4,194,304 - word x 16-bit)
PIN FUNCTION
CLK
Input
Master Clock:
All other inputs are referenced to the rising edge of CLK
CKE
Input
Clock Enable:
CKE controls internal clock.When CKE is low, internal clock for
the following cycle is ceased. CKE is also used to select
auto / self-refresh.
After self-refresh mode is started, CKE becomes asynchronous input.
Self-refresh is maintained as long as CKE is low.
/CS
Input
Chip Select:
When /CS is high, any command means No Operation.
/RAS, /CAS, /WE
Input
Combination of /RAS, /CAS, /WE defines basic commands.
A0-12
Input
A0-12 specify the Row / Column Address in conjunction with BA0,1.
The Row Address is specified by A0-12.
The Column Address is specified by A0-9(x8)/A0-8(x16).
A10 is also used to indicate precharge option. When A10 is high at a
read / write command, an auto precharge is performed. When A10 is
high at a precharge command, all banks are precharged.
BA0,1
Input
Bank Address:
BA0,1 specifies one of four banks to which a command is applied.
BA0,1 must be set with ACT, PRE , READ , WRITE commands.
DQ0-7(x8),
DQ0-15(x16)
Input / Output
Data In and Data out are referenced to the rising edge of CLK.
DQM(x8),
DQMU/L(x16)
Input
Din Mask / Output Disable:
When DQM(U/L) is high in burst write, Din for the current cycle is
masked. When DQM(U/L) is high in burst read,
Dout is disabled at the next but one cycle.
Vdd, Vss
Power Supply
Power Supply for the memory array and peripheral circuitry.
VddQ, VssQ
Power Supply
VddQ and VssQ are supplied to the Output Buffers only.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS42S83200A-75T | 256 Mb Synchronous DRAM |
| IS42S83200A-75TL | 256 Mb Synchronous DRAM |
| IS42VS16100C1-10TLI | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16100C1 | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16100C1-10T | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S83200A-75T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256 Mb Synchronous DRAM |
| IS42S83200A-75TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256 Mb Synchronous DRAM |
| IS42S83200B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256-MBIT SYNCHRONOUS DRAM |
| IS42S83200B-6T | 功能描述:動態(tài)隨機存取存儲器 256M 3.3v 32Mx8 166MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S83200B-6TL | 功能描述:動態(tài)隨機存取存儲器 256M 3.3v 32Mx8 166MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。