參數(shù)資料
型號(hào)： IS42S16800A1-7TL
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 8Meg x16 128-MBIT SYNCHRONOUS DRAM
中文描述： 8M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54
封裝： LEAD FREE, TSOP2-54
文件頁數(shù)： 33/63頁
文件大?。?/td> 827K
代理商： IS42S16800A1-7TL
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev.
00
B
0
5/01
/06
33
ISSI
IS42S16800A1
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
Notes
V
DD
Power Supply Voltage
-1.0 to +4.6
V
1
V
DDQ
Power Supply Voltage for Output
-1.0 to +4.6
V
1
V
IN
Input Voltage
-0.3 to V
DD
+0.3
V
1
V
OUT
Output Voltage
-0.3 to V
DD
+0.3
V
1
T
A
Operating Temperature (ambient)
0 to +70
°
C
1
T
STG
Storage Temperature
-55 to +150
°
C
1
P
D
Power Dissipation
1.0
W
1
I
OUT
Short Circuit Output Current
50
mA
1
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rat-
ing only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Recommended DC Operating Conditions
(T
A
=
0
°
C to 70
°
C)
Symbol
Parameter
Rating
Units
Notes
Min.
Typ.
Max.
V
DD
Supply Voltage
3.0
3.3
3.6
V
1
V
DDQ
Supply Voltage for Output
3.0
3.3
3.6
V
1
V
IH
Input High Voltage
2.0
3.0
V
DD
+ 0.3
V
1, 2
V
IL
Input Low Voltage
-1.0
—
0.8
V
1, 3
V
oH
Output Logic High Voltage
2.4
—
—
V
I
oH
=mA
V
IL
Output Logic
Voltage
—
—
V
I
oL
=
mA
1. All voltages referenced to V
SS
and V
SSQ
.
2. V
IH
(max) = V
DD
+ 2.3V for pulse width
≤
3ns.
3. V
IL
(min) = V
SS
- 2.0V for pulse width
≤
3ns.
Capacitance
(T
A
= 25
°
C, f = 1MHz, V
DD
= 3.3V
±
0.3V)
Symbol
Parameter
Min.
Typ
Max.
Units
Notes
C
I
Input Capacitance (A0-A11, BA0, BA1, CS, RAS, CAS, WE, CKE, DQM)
2.5
3.0
3.8
pF
Input Capacitance (CK)
2.5
2.8
3.5
pF
C
O
Output Capacitance (DQ0 - DQ15)
4.0
4.5
6.5
pF
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