- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377550 > IS42S16800A1-7TL (INTEGRATED SILICON SOLUTION INC) 8Meg x16 128-MBIT SYNCHRONOUS DRAM PDF資料下載
參數(shù)資料
| 型號： | IS42S16800A1-7TL |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 8M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54 |
| 封裝： | LEAD FREE, TSOP2-54 |
| 文件頁數(shù)： | 32/63頁 |
| 文件大?。?/td> | 827K |
| 代理商： | IS42S16800A1-7TL |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁當(dāng)前第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁
ISSI
32
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev.
00
B
0
5/01
/06
IS42S16800A1
Write
Recovering
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
H
H
H
X
L
L
L
L
H
H
H
X
L
L
L
L
H
H
H
X
L
L
L
L
H
H
H
X
L
L
H
H
L
L
H
X
L
L
H
H
L
L
H
X
L
L
H
H
L
L
H
X
L
L
H
H
L
L
H
X
L
H
L
H
L
H
H
X
L
H
L
H
L
H
H
X
L
H
L
H
L
H
H
X
L
H
L
H
L
H
H
X
OP Code
Mode Register Set
Auto or Self Refresh
Precharge
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
Start Write; Determine if Auto Precharge
Start Read; Determine if Auto Precharge
No Operation; Row Active after t
DPL
No Operation; Row Active after t
DPL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
No Operation; Precharge after t
DPL
No Operation; Precharge after t
DPL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
No Operation; Idle after t
RC
No Operation; Idle after t
RC
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
No Operation; Idle after two clock cycles
No Operation; Idle after two clock cycles
X
BS
BS
BS
BS
X
X
X
X
4
4
9
9
Row Address Bank Activate
Column
Column
X
X
OP Code
X
X
Row Address Bank Activate
Column
Column
X
X
OP Code
X
X
Row Address Bank Activate
Column
Column
X
X
OP Code
X
X
Row Address Bank Activate
Column
Column
X
X
Write
Read
No Operation
Device Deselect
Mode Register Set
Auto or Self Refresh
Precharge
Write
Recovering
with
Auto Pre-
charge
X
BS
BS
BS
BS
X
X
4
4
Write
Read
No Operation
Device Deselect
Mode Register Set
Auto or Self Refresh
Precharge
4, 9
4, 9
Refreshing
X
BS
BS
BS
BS
X
X
Write
Read
No Operation
Device Deselect
Mode Register Set
Auto or Self Refresh
Precharge
Mode
Register
Accessing
X
BS
BS
BS
BS
X
X
Write
Read
No Operation
Device Deselect
Current State Truth Table
(Part 3 of 3)(See note 1)
Current State
Command
Action
Notes
CS
RAS CAS
WE
BA0,BA1
A11 - A0
Description
1. CKE is assumed to be active (high) in the previous cycle for all entries. The Current State is the state of the bank that the Command is
being applied to.
2. All Banks must be idle; otherwise, it is an illegal action.
3. If CKE is active (high) the SDRAM will start the Auto (CBR) Refresh operation, if CKE is inactive (low) than the Self Refresh mode is
entered.
4. The Current State refers to only one of the banks. If BS selects this bank then the action is illegal. If BS selects the bank not being refer-
enced by the Current State then the action may be legal depending on the state of that bank.
5. If CKE is inactive (low) then the Power Down mode is entered; otherwise there is a No Operation.
6. The minimum and maximum Active time (t
RAS
) must be satisfied.
7. The RAS to CAS Delay (t
RCD
) must occur before the command is given.
8. Column address A10 is used to determine if the Auto Precharge function is activated.
9. The command must satisfy any bus contention, bus turn around, and/or write recovery requirements.
10. The command is illegal if the minimum bank to bank delay time (t
RRD
) is not satisfied.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS42S16800B-7TL | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800B | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800B-6T | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800B-6TL | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800B-6TLI | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S16800A-6T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-6TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-7B | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-7BI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-7BL | 制造商:Integrated Silicon Solution Inc 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。