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| 型號： | IS42S16800A1-7TL |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 8M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54 |
| 封裝： | LEAD FREE, TSOP2-54 |
| 文件頁數(shù)： | 30/63頁 |
| 文件大?。?/td> | 827K |
| 代理商： | IS42S16800A1-7TL |
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ISSI
30
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev.
00
B
0
5/01
/06
IS42S16800A1
Current State Truth Table
(Part 1 of 3)(See note 1)
Current State
Command
Action
Notes
CS
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
RAS CAS
L
L
L
L
H
H
H
X
L
L
L
L
H
H
H
X
L
L
L
L
H
H
H
X
L
L
L
L
H
H
H
X
WE
L
H
L
H
L
H
H
X
L
H
L
H
L
H
H
X
L
H
L
H
L
H
H
X
L
H
L
H
L
H
H
X
BA0,BA1
A11 - A0
Description
Mode Register Set
Auto or Self Refresh
Precharge
Idle
L
L
H
H
L
L
H
X
L
L
H
H
L
L
H
X
L
L
H
H
L
L
H
X
L
L
H
H
L
L
H
X
OP Code
Set the Mode Register
Start Auto or Self Refresh
No Operation
Activate the specified bank and row
ILLEGAL
ILLEGAL
No Operation
No Operation or Power Down
ILLEGAL
ILLEGAL
Precharge
ILLEGAL
Start Write; Determine if Auto Precharge
Start Read; Determine if Auto Precharge
No Operation
No Operation
ILLEGAL
ILLEGAL
Terminate Burst; Start the Precharge
ILLEGAL
Terminate Burst; Start the Write cycle
Terminate Burst; Start a new Read cycle
Continue the Burst
Continue the Burst
ILLEGAL
ILLEGAL
Terminate Burst; Start the Precharge
ILLEGAL
Terminate Burst; Start a new Write cycle
Terminate Burst; Start the Read cycle
Continue the Burst
Continue the Burst
2
X
BS
BS
BS
BS
X
X
X
X
2, 3
Row Address Bank Activate
Column
Column
X
X
OP Code
X
X
Row Address Bank Activate
Column
Column
X
X
OP Code
X
X
Row Address Bank Activate
Column
Column
X
X
OP Code
X
X
Row Address Bank Activate
Column
Column
X
X
Write w/o Precharge
Read w/o Precharge
No Operation
Device Deselect
Mode Register Set
Auto or Self Refresh
Precharge
4
4
5
Row Active
X
BS
BS
BS
BS
X
X
6
4
Write
Read
No Operation
Device Deselect
Mode Register Set
Auto or Self Refresh
Precharge
7, 8
7, 8
Read
X
BS
BS
BS
BS
X
X
4
Write
Read
No Operation
Device Deselect
Mode Register Set
Auto or Self Refresh
Precharge
8, 9
8, 9
Write
X
BS
BS
BS
BS
X
X
4
Write
Read
No Operation
Device Deselect
8, 9
8, 9
1. CKE is assumed to be active (high) in the previous cycle for all entries. The Current State is the state of the bank that the Command is
being applied to.
2. All Banks must be idle; otherwise, it is an illegal action.
3. If CKE is active (high) the SDRAM will start the Auto (CBR) Refresh operation, if CKE is inactive (low) than the Self Refresh mode is
entered.
4. The Current State refers to only one of the banks. If BS selects this bank then the action is illegal. If BS selects the bank not being refer-
enced by the Current State then the action may be legal depending on the state of that bank.
5. If CKE is inactive (low) then the Power Down mode is entered; otherwise there is a No Operation.
6. The minimum and maximum Active time (t
RAS
) must be satisfied.
7. The RAS to CAS Delay (t
RCD
) must occur before the command is given.
8. Column address A10 is used to determine if the Auto Precharge function is activated.
9. The command must satisfy any bus contention, bus turn around, and/or write recovery requirements.
10. The command is illegal if the minimum bank to bank delay time (t
RRD
) is not satisfied.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S16800A-6T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-6TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-7B | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-7BI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-7BL | 制造商:Integrated Silicon Solution Inc 功能描述: |
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