參數(shù)資料
型號(hào): IRF7756
英文描述: TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 12V V(BR)DSS | 4.3A I(D) | TSOP
中文描述: 晶體管| MOSFET的|配對(duì)| P通道| 12V的五(巴西)直| 4.3AI(四)|的TSOP
文件頁(yè)數(shù): 2/9頁(yè)
文件大?。?/td> 238K
代理商: IRF7756
IRF7756
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -1.0A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.0A
di/dt = -100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
35
20
-1.2
53
30
V
ns
nC
Source-Drain Ratings and Characteristics
–––
–––
–––
–––
-17
-1.0
A
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
400μs; duty cycle
2%.
Surface mounted on FR-4 board, t
10sec.
S
D
G
Min. Typ. Max. Units
-12
–––
––– -0.006 –––
–––
––– 0.040
–––
––– 0.058
–––
––– 0.087
-0.4
–––
13
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
–––
1.8
–––
2.9
–––
24
–––
33
–––
180
–––
140
––– 1400
–––
310
–––
240
Conditions
–––
V
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -4.5V, I
D
= -4.3A
V
GS
= -2.5V, I
D
= -3.4A
V
GS
= -1.8V, I
D
= -2.2A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -10V, I
D
= -4.3A
V
DS
= -9.6V, V
GS
= 0V
V
DS
= -9.6V, V
GS
= 0V, T
J
= 70°C
V
GS
= -8.0V
V
GS
= 8.0V
I
D
= -4.3A
V
DS
= -6.0V
V
GS
= -4.5V
V
DD
= -6.0V,
I
D
= -1.0A
R
G
= 6.0
V
GS
= -4.5V
V
GS
= 0V
V
DS
= -10V
= 1.0kHz
V/°C
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
-0.9
–––
-1.0
-25
-100
100
18
2.7
4.4
–––
–––
–––
–––
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
I
GSS
μA
R
DS(on)
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
nA
ns
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