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參數(shù)資料
| 型號： | IRF7809 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 17A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 17A條（?。﹟蘇 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 146K |
| 代理商： | IRF7809 |
www.irf.com
1
IRF7809/IRF7811
IRF7809/IRF7811
Provisional Datasheet
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
GS
≥
4.5V)
Pulsed Drain Current
Power Dissipation
Symbol
V
DS
V
GS
I
D
IRF7809
30
IRF7811
28
Units
V
±12
T
A
= 25°C
T
L
= 90°C
17.6
16.3
100
14
100
A
I
DM
P
D
T
A
= 25°C
T
L
= 90°C
3.5
3.0
W
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
T
J
,
T
STG
I
S
I
SM
–55 to 150
°C
A
2.5
50
2.5
50
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
New
CopperStrap
TM
Interconnect for Lower
Electrical and Thermal Resistance
Low Conduction Losses
Low Switching Losses
Minimizes Parallel MOSFETs for high
current applications
Description
These new devices employ advanced HEXFET
Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make them ideal for
high efficiency DC-DC converters that power the latest
generation of mobile microprocessors.
The IRF7809/IRF7811 employs a new
CopperStrap
TM
interconnect technology pioneered by International
Rectifier to dramatically improve the electrial & thermal
resistance contribution of the package. The new
CopperStrap
SO-8 power MOSFETs are capable of
current ratings over 17A and power dissipation of 3.5W
@ 25
°
C ambient conditions, thereby reducing the need
for paralleled devices, improving efficiency and
reliability and reducing board space.
HEXFET
Chipset for DC-DC Converters
IRF7809
30V
7.5 m
77.5 nC
23.9 nC
30 nC
IRF7811
28V
11 m
23 nC
7 nC
31 nC
V
DS
R
DS
(on)
Q
G
Q
sw
Q
oss
Absolute Maximum Ratings
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Max.
35
20
Units
°C/W
°C/W
R
θ
JA
R
θ
JL
Thermal Resistance
DEVICE RATINGS
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
SO-8
1/19/00
PD - 93812
PD - 93813
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7809A | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Chipset for DC-DC Converters |
| IRF7809ATR | 功能描述:MOSFET N-CH 30V 14.5A 8-SOIC RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF7809AV | 功能描述:MOSFET N-CH 30V 13.3A 8-SOIC RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF7809AVHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 13.3A 8-Pin SOIC |
| IRF7809AVPBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 9mOhms 41nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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