- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360932 > IRF7NA2907 75V Single N-Channel Hi-Rel MOSFET in a SMD-2 package PDF資料下載
參數(shù)資料
| 型號： | IRF7NA2907 |
| 英文描述： | 75V Single N-Channel Hi-Rel MOSFET in a SMD-2 package |
| 中文描述： | 75V的單個N -溝道高可靠性的貼片MOSFET的- 2封裝 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 112K |
| 代理商： | IRF7NA2907 |
02/18/02
www.irf.com
1
Product Summary
Part Number
IRF7NA2907
BVDSS
75V
R
DS(on)
0.0045
75A*
I
D
For footnotes refer to the last page
HEXFET
POWER MOSFET
SURFACE MOUNT (SMD-2)
IRF7NA2907
75V, N-CHANNEL
Seventh Generation HEXFET
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
Features:
Low R
DS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
SMD-2
* Current is limited by package
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temp.
Weight
Units
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
75*
75*
300
250
2.0
±20
500
75
25
6.4
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (for 5s)
3.3 (Typical)
g
o
C
A
PD - 94337B
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF7NJZ44V | 60V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package |
| IRF7Y1405CM | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 18A I(D) | TO-257AA |
| IRF7YSZ44VCM | 60V Single N-Channel Hi-Rel MOSFET in a Low Ohmic TO-257AA package |
| IRF8010L | 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
| IRF8010S | 100V Single N-Channel HEXFET Power MOSFET in a D2Pak package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7NA2907SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 75V 75A 3SMD-1 - Bulk |
| IRF7NA2907SCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 75V 75A 3SMD-2 - Bulk |
| IRF7NJZ44V | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 22A 3SMD-0.5 - Bulk |
| IRF7NJZ44VSCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 22A 3SMD-1 - Bulk |
| IRF7NJZ44VSCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 22A 3SMD-0.5 - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。