參數(shù)資料
型號： IRF8010L
英文描述： 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
中文描述： 100V的單N溝道HEXFET功率MOSFET的采用TO - 262封裝
文件頁數(shù)： 1/10頁
文件大小： 224K
代理商： IRF8010L
Notes
www.irf.com
through
are on page 8
1
IRF8010S
IRF8010L
HEXFET Power MOSFET
SMPS MOSFET
V
DSS
100V
R
DS(on)
max
15m
I
D
80A
PD - 94573
Applications
High frequency DC-DC converters
UPS and Motor Control
Benefits
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
Typical R
DS(on)
= 12m
D
2
Pak
IRF8010S
TO-262
IRF8010L
Absolute Maximum Ratings
Parameter
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
P
D
@T
C
= 25°C Power Dissipation
Continuous Drain Current, V
GS
@ 10V
A
Pulsed Drain Current
W
Linear Derating Factor
Gate-to-Source Voltage
W/°C
V
V
GS
dv/dt
T
J
T
STG
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
V/ns
°C
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
–––
–––
0.50
–––
Max.
0.57
0.80
–––
40
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Junction-to-Case (end of life)
°C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB Mount, steady state)
16
-55 to + 175
300 (1.6mm from case )
Max.
80
57
320
260
1.8
± 20
相關(guān)PDF資料
PDF描述
IRF8010S 100V Single N-Channel HEXFET Power MOSFET in a D2Pak package
IRF820ASTRL TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.5A I(D) | TO-263AB
IRF820ASTRR TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.5A I(D) | TO-263AB
IRF820FI (169.47 k)
IRF821FI TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2A I(D) | TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF8010LPBF 制造商:International Rectifier 功能描述:MOSFET, 100V, 80A, 15 MOHM, 81 NC QG, TO-262 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 80A 3PIN TO-262 - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N 100V TO-262 制造商:International Rectifier 功能描述:MOSFET, N, 100V, TO-262 制造商:International Rectifier 功能描述:MOSFET, N, 100V, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation ;RoHS Compliant: Yes 制造商:International Rectifier 功能描述:MOSFET, N, 100V, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation ;RoHS Compliant: Yes 制造商:International Rectifier 功能描述:MOSFET N-Channel 100V 80A TO262 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-262
IRF8010PBF 功能描述:MOSFET MOSFT 100V 80A 15mOhm 81nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF8010S 制造商:IRF 制造商全稱:International Rectifier 功能描述:SMPS MOSFET
IRF8010SPBF 功能描述:MOSFET 100V N-CH HEXFET 15mOhms 81nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF8010STRLPBF 功能描述:MOSFET MOSFT 100V 80A 15mOhm 81nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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