參數(shù)資料
型號： IRF8010L
英文描述： 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
中文描述： 100V的單N溝道HEXFET功率MOSFET的采用TO - 262封裝
文件頁數(shù)： 10/10頁
文件大小： 224K
代理商： IRF8010L
IRF8010S/IRF8010L
10
www.irf.com
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
01/03
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Starting T
J
= 25°C, L = 0.31mH, R
G
= 25
, I
AS
= 45A.
I
SD
≤
45A, di/dt
≤
110A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
300μs; duty cycle
≤
2%.
Rth(jc) (end of life) is the maximum measured value
after 1000 temperature cycles from -55 to 150°C and
is accounted for by the physical wearout of the die attach
medium
in worse case PCB mounting condition of
material (solder/substrate), process and re-flow
temperature.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to 80%
V
DSS
.
Calculated continuous current based on maximum
allowable junction temperature. Package limitation
current is 75A.
When mounted on 1" square PCB ( FR-4 or G-10
Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
相關(guān)PDF資料
PDF描述
IRF8010S 100V Single N-Channel HEXFET Power MOSFET in a D2Pak package
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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IRF8010S 制造商:IRF 制造商全稱:International Rectifier 功能描述:SMPS MOSFET
IRF8010SPBF 功能描述:MOSFET 100V N-CH HEXFET 15mOhms 81nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF8010STRLPBF 功能描述:MOSFET MOSFT 100V 80A 15mOhm 81nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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