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參數(shù)資料
| 型號： | IRF7756 |
| 英文描述： | TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 12V V(BR)DSS | 4.3A I(D) | TSOP |
| 中文描述： | 晶體管| MOSFET的|配對| P通道| 12V的五（巴西）直| 4.3AI（四）|的TSOP |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 238K |
| 代理商： | IRF7756 |
HEXFET
Power MOSFET
5/10/01
IRF7756
Absolute Maximum Ratings
www.irf.com
1
Thermal Resistance
Parameter
Max.
-12
-4.3
-3.5
-17
1.0
0.64
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Linear Derating Factor 8.0 mW/°C
V
GS
Gate-to-Source Voltage
±8.0 V
T
J
, T
STG
Junction and Storage Temperature Range
Drain-Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
A
W
W
-55 to +150
°C
PD -94159
V
DSS
-12V
R
DS(on)
max
0.040@V
GS
= -4.5V
0.058@V
GS
= -2.5V
0.087@V
GS
= -1.8V
I
D
±
4.3A
±
3.4A
±
2.2A
Parameter
Max.
125
Units
°C/W
R
θ
JA
Maximum Junction-to-Ambient
TSSOP-8
Description
HEXFET
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
provides thedesigner
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
4 = G1
3 = S1
2 = S1
1 = D1
1
2
3
4
5
6
7
8
5 = G2
6 = S2
7 = S2
8 = D2
l
Ultra Low On-Resistance
l
Dual P-Channel MOSFET
l
Very Small SOIC Package
l
Low Profile (< 1.2mm)
l
Available in Tape & Reel
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7756GTRPBF | 功能描述:MOSFET MOSFT DUAL PCh -12V 3.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7756TR | 功能描述:MOSFET 2P-CH 12V 4.3A 8-TSSOP RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:HEXFET® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| IRF7756TRPBF | 功能描述:MOSFET MOSFT DUAL PCh -12V 3.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7757 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=20V) |
| IRF7757GPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFETPower MOSFET Ultra Low On-Resistance |
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