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參數(shù)資料
| 型號(hào)： | IRF7343 |
| 廠商： | International Rectifier |
| 英文描述： | Dual N and P Channel MOSFET(雙 N溝道 和P溝道 MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 雙N和P通道MOSFET（雙?溝道和P溝道場(chǎng)效應(yīng)管馬鞍山） |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 149K |
| 代理商： | IRF7343 |
N-Ch P-Ch
V
DSS
55V
-55V
R
DS(on)
0.050
0.105
PRELIMINARY
HEXFET
Power MOSFET
PD - 9.1709
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
10/29/97
SO-8
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual N and P Channel MOSFET
l
Surface Mount
l
Fully Avalanche Rated
IRF7343
Description
D1
N -C H AN N EL M OSF ET
1
P-C H ANN EL MO SFE T
D1
D2
D2
G 1
S2
G 2
S1
Top View
8
2
3
4
5
6
7
Max.
N-Channel
55
4.7
3.8
38
P-Channel
-55
-3.4
-2.7
-27
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
E
AS
I
AR
E
AR
V
GS
dv/dt
T
J,
T
STG
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
2.0
1.3
W
W
mJ
A
mJ
V
V/ns
°C
72
4.7
114
-3.4
0.20
± 20
5.0
-5.0
-55 to + 150
Parameter
A
Absolute Maximum Ratings
Parameter
Typ.
–––
Max.
62.5
Units
°C/W
R
θ
JA
Maximum Junction-to-Ambient
Thermal Resistance
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7343IPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7343ITRPBF | 制造商:International Rectifier 功能描述: |
| IRF7343PBF | 功能描述:MOSFET 55V DUAL N / P CH 20V VGS 55V BVDSS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7343QPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7343QPBF_10 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET POWER MOSFET |
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