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參數(shù)資料
| 型號： | IHW20N120R |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Reverse Conducting IGBT with monolithic body diode |
| 中文描述： | 反向開展與IGBT的單片體二極管 |
| 文件頁數(shù)： | 12/12頁 |
| 文件大?。?/td> | 357K |
| 代理商： | IHW20N120R |
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
Infineon Technologies AG 5/10/06.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (
www.infineon.com
).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
IHW20N120R
Soft Switching Series
Power Semiconductors
12
Rev. 2.4 May 06
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IHW20T120 | Soft Switching Series |
| IHW30N100R | Reverse Conducting IGBT with monolithic body diode |
| IHW30N120R | IGBT with monolithic body diode for soft switching Applications |
| IHW30N60T | Low Loss DuoPack : IGBT in TrenchStop technology with optimised diode |
| IHW30N90T | Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IHW20N120R2 | 功能描述:IGBT 晶體管 REVERSE CONDUCT IGBT 1200V 20A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IHW20N120R3 | 功能描述:IGBT 晶體管 IH SeriesRev Conduct IGBT Monolithic Body RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IHW20N120R3FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 40A 310W TO247-3 |
| IHW20N135R3 | 功能描述:IGBT 1350V 20A 310W TO247-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:TrenchStop™ 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| IHW20N135R3FKSA1 | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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