參數(shù)資料
型號: IHW30N60T
廠商: INFINEON TECHNOLOGIES AG
英文描述: Low Loss DuoPack : IGBT in TrenchStop technology with optimised diode
中文描述: 低損耗DuoPack:在TrenchStop IGBT的技術(shù)與優(yōu)化二極管
文件頁數(shù): 1/12頁
文件大?。?/td> 367K
代理商: IHW30N60T
Low Loss DuoPack : IGBT in TrenchStop
technology with optimised diode
Features:
Very low V
CE(sat)
1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5
μ
s
TrenchStop and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low V
CE(sat)
Positive temperature coefficient in V
CE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Applications:
Inductive Cooking
Soft Switching Applications
Type
V
CE
I
C
V
CE(sat
),Tj=25°C
Soft Switching Series
IHW30N60T
q
Power Semiconductors
1
Rev. 2.1 Apr. 06
T
j,max
Marking
Package
IHW30N60T
600V
30A
1.5V
175
°
C
H30T60
PG-TO-247-3-21
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current, limited by
T
jmax
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area (
V
CE
600V,
T
j
175
°
C)
Diode forward current
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Transient Gate-emitter voltage (
t
p
< 5 ms)
Short circuit withstand time
2)
V
GE
= 15V,
V
CC
400V,
T
j
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
V
CE
I
C
600
60
30
V
A
I
Cpuls
-
90
90
I
F
23
13
I
Fpuls
V
GE
30
±
20
±
25
5
V
t
SC
μ
s
P
tot
T
j
T
stg
-
187
W
-40...+175
-55...+175
260
°
C
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO-247-3-21
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