參數(shù)資料
型號(hào)： IHW30N60T
廠商： INFINEON TECHNOLOGIES AG
英文描述： Low Loss DuoPack : IGBT in TrenchStop technology with optimised diode
中文描述： 低損耗DuoPack：在TrenchStop IGBT的技術(shù)與優(yōu)化二極管
文件頁(yè)數(shù)： 9/12頁(yè)
文件大小： 367K
代理商： IHW30N60T
Soft Switching Series
IHW30N60T
q
Power Semiconductors
9
Rev. 2.1 Apr. 06
Z
t
,
T
1μs
10μs
100μs
1ms
10ms 100ms
10
-2
K/W
10
-1
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D
=0.5
Z
t
,
T
10μs
100μs
1ms
10ms
100ms
10
-1
K/W
10
0
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D
=0.5
t
P
,
PULSE WIDTH
t
P
,
PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(
D = t
p
/
T
)
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(
D
=
t
P
/
T
)
I
F
,
F
0.0V
0.5V
1.0V
1.5V
0A
10A
20A
30A
175°C
T
J
=25°C
V
F
,
F
-50°C
0°C
50°C
100°C
150°C
0.0V
0.5V
1.0V
10A
3A
I
F
=20A
V
F
,
FORWARD VOLTAGE
T
J
,
JUNCTION TEMPERATURE
Figure 24. Typical diode forward voltage as a
function of junction temperature
Figure 23. Typical diode forward current as
a function of forward voltage
R
,(K/W )
0.29566
0.25779
0.19382
0.05279
R
1
τ
,
(s)
6.478*10
-2
6.12*10
-3
4.679*10
-4
6.45*10
-5
C
1
=
τ
1
/
R
1
R
2
C
2
=
τ
2
/
R
2
R
,(K/W )
0.0715
0.2222
0.4265
0.364
0.0181
τ
,
(s)
9.45*10
-2
2.55*10
-2
3.6*10
-3
5.1*10
-4
1.09*10
-4
C
1
=
τ
1
/
R
1
R
1
R
2
C
2
=
τ
2
/
R
2
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IHW30N60T_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Soft Switching Series
IHW30N60TFKSA1 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 60A 187W TO247-3
IHW30N90R 功能描述:IGBT 晶體管 REVERSE CONDUCT IGBT 900V 30A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IHW30N90R_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Reverse Conducting IGBT with monolithic body diode
IHW30N90RXK 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 900V 60A 3-Pin(3+Tab) TO-247 Tube
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