參數(shù)資料
型號(hào)： IHW30N60T
廠商： INFINEON TECHNOLOGIES AG
英文描述： Low Loss DuoPack : IGBT in TrenchStop technology with optimised diode
中文描述： 低損耗DuoPack：在TrenchStop IGBT的技術(shù)與優(yōu)化二極管
文件頁(yè)數(shù)： 8/12頁(yè)
文件大?。?/td> 367K
代理商： IHW30N60T
Soft Switching Series
IHW30N60T
q
Power Semiconductors
8
Rev. 2.1 Apr. 06
V
G
,
G
-
E
0nC
30nC
60nC
90nC 120nC 150nC 180n
0V
5V
10V
15V
480V
120V
c
C
0V
10V
20V
30V
40V
100pF
1nF
C
rss
C
oss
C
iss
Q
GE
,
GATE CHARGE
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(
V
GE
=0V,
f
= 1 MHz)
Figure 17. Typical gate charge
(
I
C
=30 A)
I
C
,
C
12V
14V
16V
18V
0A
100A
200A
300A
400A
t
S
,
S
10V
11V
12V
13V
14V
0μs
2μs
4μs
6μs
8μs
10μs
12μs
V
GE
,
GATE
-
EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
(
V
CE
≤
400V,
T
j
≤
150
°
C)
V
GE
,
GATE
-
EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(
V
CE
=600V
,
start at
T
J
=
25°C,
T
Jmax
<150°C)
相關(guān)PDF資料
PDF描述
IHW30N90T Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode
IKA06N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKB06N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKB20N60T IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
IKP20N60T IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IHW30N60T_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Soft Switching Series
IHW30N60TFKSA1 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 60A 187W TO247-3
IHW30N90R 功能描述:IGBT 晶體管 REVERSE CONDUCT IGBT 900V 30A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IHW30N90R_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Reverse Conducting IGBT with monolithic body diode
IHW30N90RXK 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 900V 60A 3-Pin(3+Tab) TO-247 Tube
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