參數(shù)資料
型號: IBM13Q4739CC
廠商: IBM Microeletronics
英文描述: 4M x 72 Registered SDRAM Module(帶寄存同步動態(tài)RAM模塊(4M x 72高速存儲器陣列結(jié)構(gòu)))
中文描述: 4米× 72注冊內(nèi)存模塊(帶寄存同步動態(tài)內(nèi)存模塊(4米× 72高速存儲器陣列結(jié)構(gòu)))
文件頁數(shù): 19/56頁
文件大?。?/td> 1471K
代理商: IBM13Q4739CC
IBM13Q4739CC
4M x 72 Registered SDRAM Module
08J0512.E24526
Released 4/98
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 19 of 56
Command Truth Table
(
All of the SDRAM operations are defined by states of S0, WE, RAS, CAS, and DQM at the positive
rising edge of the clock.
)
Function
CKE0
S0
RAS
CAS
WE
DQM
A11/BS
A10/AP
A9 - A0
Notes
Previous
Cycle
Current
Cycle
Mode Register Set
H
X
L
L
L
L
X
OP Code
Auto (CBR) Refresh
H
H
L
L
L
H
X
X
X
X
Entry Self Refresh
H
L
L
L
L
H
X
X
X
X
Single Bank Precharge
H
X
L
L
H
L
X
BS
L
X
1
Precharge all Banks
H
X
L
L
H
L
X
X
H
X
Bank Activate
H
X
L
L
H
H
X
BS
Row Address
1
Write
H
X
L
H
L
L
X
BS
L
Column
1
Write with Auto-Precharge
H
X
L
H
L
L
X
BS
H
Column
1
Read
H
X
L
H
L
H
X
BS
L
Column
1
Read with Auto-Precharge
H
X
L
H
L
H
X
BS
H
Column
1
Burst Termination
H
X
L
H
H
L
X
X
X
X
2
No Operation
H
X
L
H
H
H
X
X
X
X
Device Deselect
H
X
H
X
X
X
X
X
X
X
Clock Suspend/Standby Mode
L
X
X
X
X
X
X
X
X
X
3
Data Write/Output Enable
H
X
X
X
X
X
L
X
X
X
4
Data Mask/Output Disable
H
X
X
X
X
X
H
X
X
X
4
Power Down Mode Entry
X
L
H
X
X
X
X
X
X
X
5
Power Down Mode Exit
X
H
H
X
X
X
X
X
X
X
5
1. Bank Select (BS), if BS = 0 then bank A is selected, if BS = 1 then bank B is selected.
2. During a Burst Write cycle there is a zero clock delay, for a Burst Read cycle the delay is equal to the CAS latency.
3. During normal access mode, CKE0 is held high and CK0 is enabled. When it is low, it freezes the internal clock and extends data
Read and Write operations. One clock delay is required for mode entry and exit.
4. The DQM has two functions for the data DQ Read and Write operations. During a Read cycle, when DQM goes high at a clock tim-
ing the data outputs are disabled and become high impedance after a two clock delay. DQM also provides a data mask function for
Write cycles. When it activates, the Write operation at the clock is prohibited (zero clock latency).
5. All banks must be precharged before entering the Power Down Mode. The Power Down Mode does not perform any Refresh oper-
ations, therefore the device can’t remain in this mode longer than the Refresh period (t
REF
) of the device. One clock delay is
required for mode entry and exit.
相關(guān)PDF資料
PDF描述
IBM13Q8734HCA 8M x 72 Registered SDRAM Module(8M x 72 200腳寄存同步動態(tài)RAM模塊)
IBM13Q8739CC 8M x 72 Registered SDRAM Module(帶寄存同步動態(tài)RAM模塊(8M x 72高速存儲器陣列結(jié)構(gòu)))
IBM13T16644NPA 16M x 64 PC100 SDRAM(1MB PC100 同步動態(tài)RAM)
IBM13T2649JC 2M x 64 SDRAM SO DIMM(Small Outline Dual In-Line Memory Module)(2M x 64 小外形雙列直插同步動態(tài)RAM模塊)
IBM13T2649NC 2M x 64 SDRAM SO DIMM(2M x 64小外形雙列直插同步動態(tài)RAM模塊)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IBM14H5481 制造商:AVED Memory Products 功能描述:
IBM14H5540 制造商:AVED MEMORY PRODUCTS 功能描述: 制造商:AVED Memory Products 功能描述:
IBM17R8251 制造商:AVED Memory Products 功能描述:
IBM17R8252 制造商:AVED Memory Products 功能描述:
IBM1805T 制造商:Schneider Electric 功能描述:IBM1805T