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參數(shù)資料
| 型號： | IBM043614PQKB |
| 廠商： | IBM Microeletronics |
| 英文描述： | 32K X 36 BURST SRAM(1M (32K X 36)同步可猝發(fā)高性能靜態(tài)RAM) |
| 中文描述： | 32KX8的36爆的SRAM（100萬（32KX8的36）同步可猝發(fā)高性能靜態(tài)內(nèi)存） |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 219K |
| 代理商： | IBM043614PQKB |
IBM043614PQKB
32K X 36 BURST SRAM
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 6 of 13
8190747
SA14-4652-03
Revised 9/97
Capacitance
(T
A
=0 to +70
°
C, V
DD
=3.3V
±
5%, f=1MHz)
Parameter
Symbol
Test Condition
Max
Units
Notes
Input Capacitance
C
IN
V
IN
= 0V
5
pF
Data I/O Capacitance (DQ0-DQ35)
C
OUT
V
OUT
= 0V
5
pF
DC Electrical Characteristics
(T
A
= 0 to +70
°
C, V
DD
=3.3V
±
5%)
Parameter
Symbol
Min.
Max.
Units
Notes
Operating Current
Average Power Supply Operating Current
(OE = V
IH
, I
OUT
= 0)
I
DD1
5
—
275
mA
2, 3
Standby Current
Power Supply Standby Current
(CS2 = V
IH
or CS2 = V
IL
or CS = V
IH
All other inputs = V
IH
or V
IL
, I
OUT.
= 0, Clock @ 66 MHz))
I
SB
—
25
mA
1, 3
Input Leakage Current
Input Leakage Current, any input
(V
IN
= 0 &V
DD
)
I
LI
—
+1
μ
A
4
Output Leakage Current
(V
OUT
=0 &V
DD
, OE = V
IH
)
I
LO
—
+1
μ
A
Output High Level
Output “H” Level Voltage (I
OH
=-8mA @ 2.4V)
V
OH
2.4
—
V
Output Low Level
Output “L” Level Voltage (I
OL
=+8mA @ 0.4V)
V
OL
—
0.4
V
1. I
SB
= Stand-by Current.
2. I
DD
= Selected Current.
3. I
OUT
= Chip Output Current.
4. The input leakage current for 5.5V inputs is 200
μ
A for Clk, Chip Selects, and Output Enable. Other inputs have100
μ
A of leakage
current at 5.5V.
AC Test Conditions
(T
A
=0 to +70
°
C, V
DD
=3.3V
±
5%)
Parameter
Symbol
Conditions
Units
Notes
Input Pulse High Level
V
IH
3.0
V
Input Pulse Low Level
V
IL
0.0
V
Input Rise Time
T
R
2.0
ns
Input Fall Time
T
F
2.0
ns
Input and Output Timing Reference Level
1.5
V
Output Load Conditions
1
1. See AC Test Loading figure 1 on page 8.
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