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參數(shù)資料
| 型號(hào)： | IBM11D8490BG |
| 廠商： | IBM Microeletronics |
| 英文描述： | 8M x 36 ECC-on-SIMM w/ Error Lines(8M x 36動(dòng)態(tài)RAM模塊（（片上帶糾錯(cuò)代碼功能）) |
| 中文描述： | 8米× 36 ECC的問題，上海藥物研究所瓦特/錯(cuò)誤線（8米× 36動(dòng)態(tài)內(nèi)存模塊（（片上帶糾錯(cuò)代碼功能）） |
| 文件頁數(shù)： | 1/20頁 |
| 文件大?。?/td> | 293K |
| 代理商： | IBM11D8490BG |
IBM11E4490BGIBM11D4490BG
IBM11E8490BGIBM11D8490BG
4M/8M x 36 ECC-on-SIMM w/ Error Lines
Preliminary
75H3879
Revised 10/98
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 20
Features
72-Pin JEDEC-Standard Single In-Line
Memory Module
Performance:
Single-error-correct (SEC) high-speed ECC
algorithm
Single 5.0V
±
0.25V Power Supply
All inputs & outputs are fully TTL & CMOS
compatible
Fast Page Mode access cycle
Refresh Modes: RAS-Only and CBR
2048 refresh cycles distributed across 32ms
11/11 Addressing (Row/Column)
Provides ECC and retrofits to standard x36
socket
Au and Sn/Pb versions available
Error indicator signals for each byte of data
Description
The IBM11D4490BG/IBM11D8490BG are
16MB/32MB industry standard 72-pin 4-byte single
in-line memory modules (SIMM) that have fully func-
tional, retrofittable and plug-compatible on-board
error-correcting-code (ECC). The ECC function is
completely self-contained and transparent to the
system. The module is manufactured with 4 ECC
ASICs and either 12 4M x 4 DRAMs (16MB) or 24
4M x 4 DRAMS (32MB) in SOJ packages. A unique
assembly with 6 4M x 4 DRAMs in TSOP and 18 4M
x 4 DRAMs in SOJ packages (32MB) is also avail-
able. The ECC-on-SIMM module corrects single-bit
errors that may occur in any byte of SIMM data. It is
recommended for systems that run critical applica-
tions but do not have native ECC. This family of
SIMMs (4M x 36 and 8M x 36) provides the memory
reliability required by these applications with no per-
formance penalty. An error line is activated when-
ever a single-bit error is being corrected during a
read cycle, or whenever a multi-bit uncorrectable
error is detected.
-70
t
RAC
RAS Access Time
70ns
t
CAC
CAS Access Time
20ns
t
AA
Access Time From Address
35ns
t
RC
Cycle Time
130ns
t
PC
Fast Page Mode Cycle Time 45ns
Card Outline
1
3637
72
4M x 36
8M x 36
1
36 37
72
IBM11D4480BA4M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E4480BA4M x 36 EOS11/11, 5.0V, Au.
Discontinued (7/00 - last order; 9/00 - last ship)
相關(guān)PDF資料 |
PDF描述 |
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| IBM11E8490BG | 8M x 36 ECC-on-SIMM w/ Error Lines(8M x 36動(dòng)態(tài)RAM模塊（片上帶糾錯(cuò)代碼功能）) |
| IBM11E8480BG | 8M x 36 ECC-on-SIMM（single in-line memory module）(8M x 36 片上帶可兼容的糾錯(cuò)代碼的單列動(dòng)態(tài)RAM模塊) |
| IBM11D8480BG | 8M x 36 ECC-on-SIMM（single in-line memory module）(8M x 36 片上帶可兼容的糾錯(cuò)代碼的單列動(dòng)態(tài)RAM模塊) |
| IBM11M2640HB | 2M x 64 DRAM Module(2M x 64 動(dòng)態(tài)RAM模塊) |
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