參數(shù)資料
型號(hào)： IBM043614PQKB
廠商： IBM Microeletronics
英文描述： 32K X 36 BURST SRAM(1M (32K X 36)同步可猝發(fā)高性能靜態(tài)RAM)
中文描述： 32KX8的36爆的SRAM（100萬(wàn)（32KX8的36）同步可猝發(fā)高性能靜態(tài)內(nèi)存）
文件頁(yè)數(shù)： 5/13頁(yè)
文件大?。?/td> 219K
代理商： IBM043614PQKB
IBM043614PQKB
32K X 36 BURST SRAM
8190747
SA14-4652-03
Revised 9/97
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 5 of 13
Write Enable Truth Table
WEa
WEb
WEc
WEd
Byte Written
Notes
H
H
H
H
Read All Bytes
L
L
L
L
Write All Bytes
L
H
H
H
Write Byte A (D
IN
0 - 8)
H
L
H
H
Write Byte B (D
IN
9 - 17)
H
H
L
H
Write Byte C (D
IN
18 - 26)
H
H
H
L
Write Byte D (D
IN
27 - 35)
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
Notes
Power Supply Voltage
V
DD
-0.5 to 4.6
V
1
Input Voltage
V
IN
-0.5 to 6.0
V
1
Output Voltage
V
OUT
-0.5 to V
DD
+0.5
V
1
Operating Temperature
T
OPR
0 to +70
°
C
1
Storage Temperature
T
STG
-55 to +125
°
C
1
Power Dissipation
P
D
2.0
W
1
Short Circuit Output Current
I
OUT
50
mA
1
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
Recommended DC Operating Conditions
(T
A
=0 to 70
°
C)
Parameter
Symbol
Min.
Typ.
Max.
Units
Notes
Supply Voltage
V
DD
3.135
3.3
3.465
V
1, 4
Input High Voltage
V
IH
2.2
—
5.5
V
1, 2, 4
Input Low Voltage
V
IL
-0.3
—
0.8
V
1, 3, 4
Output Current
I
OUT
—
5
8
mA
4
1. All voltages referenced to GND. All V
DD(Q)
and V
SS(Q)
pins must be connected.
2. V
IH
(Max)DC = 5.5 V, V
IH
(Max)AC = 6.0 V (pulse width
≤
4.0ns).
3. V
IL
(Min)DC = - 0.3 V, V
IL
(Min)AC= -1.5 V (pulse width
≤
4.0ns).
4. Input voltage levels are tested to the following DC conditions: 1 microsecond cycle and 200 ns set-up and hold times.
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