參數(shù)資料
型號: HYE18M256320CF-7.5
廠商: QIMONDA AG
元件分類: DRAM
英文描述: 8M X 32 DDR DRAM, 6 ns, PBGA90
封裝: 10 X 12.50 MM, 1 MM HEIGHT, GREEN, VFBGA-90
文件頁數(shù): 8/26頁
文件大?。?/td> 1609K
代理商: HYE18M256320CF-7.5
Internet Data Sheet
Rev.1.44, 2007-07
16
06262007-JK8G-48BV
HY[B/E]18M256[16/32]0CF
256-Mbit DDR Mobile-RAM
3.2
AC Characteristics
TABLE 11
AC Characteristics
Parameter
Symbol
– 6
– 7.5
Unit Note
1)2)3)4)
Min.
Max.
Min.
Max.
DQ output access time from CK/CK
t
AC
2.0
5.5
2.5
6.0
ns
5)6)
DQS output access time from CK/CK
t
DQSCK
2.0
5.5
2.5
6.0
ns
Clock high-level width
t
CH
0.45
0.55
0.45
0.55
t
CK
Clock low-level width
t
CL
0.45
0.55
0.45
0.55
t
CK
Clock half period
t
HP
min(
t
CL, tCH)min(tCL, tCH)ns
7)8)
Clock cycle time
CL = 3
t
CK
6
7.5
ns
CL = 2
12
12
DQ and DM input
Setup time
fast slew rate
t
DS
0.6
0.75
ns
9)10)11)
slow slew rate
0.7
0.85
DQ and DM input
hold time
Fast slew rate
t
DH
0.6
0.75
ns
Slow slew rate
0.7
0.85
DQ and DM input pulse width
t
DIPW
1.5
1.7
ns
13)
Address and control input
Setup time
fast slew rate
t
IS
1.1
1.3
ns
12)14)15)
slow slew rate
1.3
1.5
Address and control input
hold time
fast slew rate
t
IH
1.1
1.3
ns
slow slew rate
1.3
1.5
Address and control input pulse width
t
IPW
2.6
3.0
ns
DQ & DQS low-impedance time from CK/CK
t
LZ
1.0
1.0
ns
16)
DQ & DQS high-impedance time from CK/CK
t
HZ
5.5
6.0
ns
DQS - DQ skew
t
DQSQ
0.5
0.6
ns
17)
DQ / DQS output hold time from DQS
t
QH
t
HP-tQHS
t
HP-tQHS
–ns
Data hold skew factor
t
QHS
0.55
0.75
ns
Write command to 1st DQS latching transition
t
DQSS
0.75
1.25
0.75
1.25
t
CK
DQS input high-level width
t
DQSH
0.4
0.6
0.4
0.6
t
CK
DQS input low-level width
t
DQSL
0.4
0.6
0.4
0.6
t
CK
DQS input cycle time
t
DSC
0.9
1.1
0.9
1.1
t
CK
DQS falling edge to CK setup time
t
DSS
0.2
0.2
t
CK
DQS falling edge hold time from CK
t
DSH
0.2
0.2
t
CK
MODE REGISTER SET command period
t
MRD
2–
2
t
CK
Write preamble setup time
t
WPRES
0–
0
ns
18)
Write preamble hold time
t
WPREH
0.25
0.25
t
CK
Write postamble
t
WPST
0.4
0.6
0.4
0.6
t
CK
19)
Write preamble
t
WPRE
0.25
0.25
t
CK
相關PDF資料
PDF描述
HYM564124AR-60 1M X 64 EDO DRAM MODULE, DMA168
HYM591600TM-60 16M X 9 FAST PAGE DRAM MODULE, 60 ns, SMA30
HYM5V72A834THG-70 8M X 72 EDO DRAM MODULE, 70 ns, PDMA168
HYM71V16755HCT8M-P 16M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
HYM71V8M635HCLT6-H 8M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144
相關代理商/技術參數(shù)
參數(shù)描述
HYE18M512160BF-6 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant
HYE18M512160BF-7.5 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant
HYE18P16161AC 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M Asynchronous/Page CellularRAM
HYE18P16161AC-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:MEMORY SPECTRUM
HYE18P16161AC-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M Asynchronous/Page CellularRAM