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參數(shù)資料
| 型號： | HYE18M256320CF-7.5 |
| 廠商： | QIMONDA AG |
| 元件分類： | DRAM |
| 英文描述： | 8M X 32 DDR DRAM, 6 ns, PBGA90 |
| 封裝： | 10 X 12.50 MM, 1 MM HEIGHT, GREEN, VFBGA-90 |
| 文件頁數(shù)： | 25/26頁 |
| 文件大?。?/td> | 1609K |
| 代理商： | HYE18M256320CF-7.5 |
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Internet Data Sheet
Rev.1.44, 2007-07
8
06262007-JK8G-48BV
HY[B/E]18M256[16/32]0CF
256-Mbit DDR Mobile-RAM
2
Functional Description
The DDR Mobile-RAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally
configured as a quad-bank DRAM.
READ and WRITE accesses to the DDR Mobile-RAM are burst oriented; accesses start at a selected location and continue for
a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command,
followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select
the bank and row to be accessed (BA0, BA1 select the banks, A0 - A12 (x16)/A0 - A11 (x32), select the row). The address bits
registered coincident with the READ or WRITE command are used to select the starting column location for the burst access.
Prior to normal operation, the DDR Mobile-RAM must be initialized. The following sections provide detailed information
covering device initialization, register definition, command description and device operation.
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| HYE18M512160BF-6 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant |
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