參數(shù)資料
型號: HYE18M256320CF-7.5
廠商: QIMONDA AG
元件分類: DRAM
英文描述: 8M X 32 DDR DRAM, 6 ns, PBGA90
封裝: 10 X 12.50 MM, 1 MM HEIGHT, GREEN, VFBGA-90
文件頁數(shù): 3/26頁
文件大小: 1609K
代理商: HYE18M256320CF-7.5
Internet Data Sheet
Rev.1.44, 2007-07
11
06262007-JK8G-48BV
HY[B/E]18M256[16/32]0CF
256-Mbit DDR Mobile-RAM
2.2
Function Truth Tables
TABLE 5
Truth Table - CKE
TABLE 6
Current State Bank n - Command to Bank n
CKEn-1
CKEn
Current State
Command
Action
Note
L
Power-Down
X
Maintain Power-Down
1)2)3)4)
1) CKEn is the logic state of CKE at clock edge n; CKEn-1 was the state of CKE at the previous clock edge.
2) Current state is the state immediately prior to clock edge n.
3) COMMAND n is the command registered at clock edge n; ACTION n is a result of COMMAND n.
4) All states and sequences not shown are illegal or reserved.
Self Refresh
X
Maintain Self Refresh
Deep Power-Down
X
Maintain Deep Power-Down
L
H
Power-Down
DESELECT or NOP
Exit Power-Down
5) DESELECT or NOP commands should be issued on any clock edges occurring during
t
XP or tXSR period.
Self Refresh
DESELECT or NOP
Exit Self Refresh
Deep Power-Down
X
Exit Deep Power-Down
6) Exit from DEEP POWER DOWN requires the same command sequence as for power-up initialization.
H
L
All Banks Idle
DESELECT or NOP
Enter Precharge Power-Down
Bank(s) Active
DESELECT or NOP
Enter Active Power-Down
All Banks Idle
AUTO REFRESH
Enter Self Refresh
All Banks Idle
BURST TERMINATE
Enter Deep Power-Down
H
Current State
CS
RAS CAS WE
Command / Action
Note
Any
H
X
DESELECT (NOP / continue previous operation)
1)2)3)4)5)6)
L
H
NO OPERATION (NOP / continue previous operation)
Idle
L
H
ACTIVE (select and activate row)
LLL
H
AUTO REFRESH
L
MODE REGISTER SET
Row Active
L
H
L
H
READ (select column and start Read burst)
L
H
L
WRITE (select column and start Write burst)
L
H
L
PRECHARGE (Deactivate row in bank or banks)
Read (Auto-
Precharge
Disabled)
L
H
L
H
READ (truncate Read and start new Read burst)
L
H
L
WRITE (truncate Read and start new Write burst)
L
H
L
PRECHARGE (truncate Read and start Precharge)
L
H
L
BURST TERMINATE
相關(guān)PDF資料
PDF描述
HYM564124AR-60 1M X 64 EDO DRAM MODULE, DMA168
HYM591600TM-60 16M X 9 FAST PAGE DRAM MODULE, 60 ns, SMA30
HYM5V72A834THG-70 8M X 72 EDO DRAM MODULE, 70 ns, PDMA168
HYM71V16755HCT8M-P 16M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
HYM71V8M635HCLT6-H 8M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYE18M512160BF-6 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant
HYE18M512160BF-7.5 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant
HYE18P16161AC 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M Asynchronous/Page CellularRAM
HYE18P16161AC-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:MEMORY SPECTRUM
HYE18P16161AC-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M Asynchronous/Page CellularRAM