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參數(shù)資料
| 型號： | HYE18M256320CF-7.5 |
| 廠商： | QIMONDA AG |
| 元件分類： | DRAM |
| 英文描述： | 8M X 32 DDR DRAM, 6 ns, PBGA90 |
| 封裝： | 10 X 12.50 MM, 1 MM HEIGHT, GREEN, VFBGA-90 |
| 文件頁數(shù)： | 13/26頁 |
| 文件大小： | 1609K |
| 代理商： | HYE18M256320CF-7.5 |
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Internet Data Sheet
Rev.1.44, 2007-07
20
06262007-JK8G-48BV
HY[B/E]18M256[16/32]0CF
256-Mbit DDR Mobile-RAM
TABLE 14
Self Refresh Currents
Self refresh current:
CKE is LOW; CK = LOW, CK = HIGH; address and control inputs are
STABLE; data bus inputs are STABLE
I
DD6
See Table 14
μA
Deep Power Down current
I
DD8
10
μA
6)
1) 0
°C ≤ T
C ≤ 70 °C (comm.); -25°C ≤ TC ≤ 85 °C (ext.); VDD = 1.70 V - 1.95 V, VDDQ = 1.70 V - 1.95 V.Recommended Operating Conditions
unless otherwise noted
2) IDD specifications are tested after the device is properly initialized and measured at 133 MHz for -7.5 speed grade, and 166 MHz for -6
speed grade.
3) Input slew rate is 1.0 V/ns.
4) Definitions for
I
DD:LOW is defined as VIN ≤ 0.1 * VDDQ;HIGH is defined as VIN ≥ 0.9 * VDDQ;STABLE is defined as inputs stable at a
HIGH or LOW level;SWITCHING is defined as:- address and command: inputs changing between HIGH and LOW once per two clock
cycles;- data bus inputs: DQ changing between HIGH and LOW once per clock cycle; DM and DQS are STABLE
5) All parameters are measured with no output loads.
6) Value shown as typical and measured at 25
°C.
Parameter & Test Conditions
Max. Temperature
Symbol
Values
Units
Note
Typ.
Max.
Self refresh mode,
Full array (PASR = 000)
85
°C
I
DD6
275
400
μA
1)2)
1) -25
°C ≤ T
J ≤ 85 °C (ext.); VDD = VDDQ = 1.70V to 1.95V
2) For commercial temperature range part (HYB), the max value indicated for 85 °C applies to 70 °C
40
°C
145
–
Self refresh mode,
Half array (PASR = 001)
85
°C
210
340
40 °C
115
–
Self refresh mode,
Quarter array (PASR = 010)
85
°C
185
310
40
°C
100
–
Parameter & Test Conditions
Symbol
Values
Unit
Note
1)2)3)4)5)
– 6
– 7.5
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