參數(shù)資料
型號: HYB25D256160TG-3
廠商: INFINEON TECHNOLOGIES AG
英文描述: 122 x 32 pixel format, LED Backlight available
中文描述: 記憶譜
文件頁數(shù): 29/94頁
文件大?。?/td> 3326K
代理商: HYB25D256160TG-3
Data Sheet
35
Rev. 1.6, 2004-12
HYB25D256[16/40/80]0C[E/C/F/T](L)
256 Mbit Double-Data-Rate SDRAM
Functional Description
Figure 11
Consecutive Read Bursts: CAS Latencies (Burst Length = 4 or 8)
CAS Latency = 2
NOP
Read
NOP
Read
CK
Command
Address
DQS
DQ
CL=2
BAa, COL n
BAa, COL b
Don’t Care
DO a-n (or a-b) = data out from bank a, column n (or bank a, column b).
When burst length = 4, the bursts are concatenated.
When burst length = 8, the second burst interrupts the first.
3 subsequent elements of data out appear in the programmed order following DO a-n.
3 (or 7) subsequent elements of data out appear in the programmed order following DO a-b.
Shown with nominal tAC, tDQSCK, and tDQSQ.
CAS Latency = 2.5
NOP
Read
NOP
Read
CK
Command
Address
DQS
DQ
CL=2.5
BAa, COL n
BAa,COL b
DOa-n
DOa- n
DOa- b
DOa-b
相關(guān)PDF資料
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