參數(shù)資料
型號(hào): HYB25D256160TG-3
廠商: INFINEON TECHNOLOGIES AG
英文描述: 122 x 32 pixel format, LED Backlight available
中文描述: 記憶譜
文件頁(yè)數(shù): 25/94頁(yè)
文件大?。?/td> 3326K
代理商: HYB25D256160TG-3
Data Sheet
31
Rev. 1.6, 2004-12
HYB25D256[16/40/80]0C[E/C/F/T](L)
256 Mbit Double-Data-Rate SDRAM
Functional Description
3.5.2
Reads
Subsequent to programming the mode register with CAS latency, burst type, and burst length, Read bursts are
initiated with a Read command, as shown on Figure 9.
The starting column and bank addresses are provided with the Read command and Auto Precharge is either
enabled or disabled for that burst access. If Auto Precharge is enabled, the row that is accessed starts precharge
at the completion of the burst, provided
t
RAS has been satisfied. For the generic Read commands used in the
following illustrations, Auto Precharge is disabled.
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HYB39T256160TG-3 122 x 32 pixel format, LED Backlight available
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