參數(shù)資料
型號： HYB25D128400ATL-8
廠商： INFINEON TECHNOLOGIES AG
英文描述： 128 Mbit Double Data Rate SDRAM
中文描述： 128兆雙倍數(shù)據(jù)速率SDRAM
文件頁數(shù)： 55/79頁
文件大小： 2596K
代理商： HYB25D128400ATL-8
HYB25D128[400/800/160]A-[6/7/8]
128Mbit Double Data Rate SDRAM
Electrical Characteristics
Data Sheet
55
Rev. 1.06, 2004-01
09192003-LFQ1-R60G
4.3
Weak Strength Pull-down and Pull-up Characteristics
1. The weak pulldown V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner
bounding lines of the V-I curve
2. The weak pullup V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner
bounding lines of the V-I curve.
3. The full variation in driver pullup current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the V-I curve.
4. The full variation in the ratio of the maximum to minimum pullup and pulldown current does not exceed 1.7, for
device drain to source voltages from 0.1 to 1.0.
5. The full variation in the ratio of the nominal pullup to pulldown current should be unity
±
10
%
, for device drain
to source voltages from 0.1 to 1.0V.
Figure 34
Weak Strength Pull-down Characteristics
Figure 35
Weak Strength Pull-up Characteristics
0
10
20
30
40
50
60
70
80
0,0
0,5
1,0
1,5
2,0
2,5
Vout [V]
I
Maximum
Typical high
Typical low
Minimum
-80,0
-70,0
-60,0
-50,0
-40,0
-30,0
-20,0
-10,0
0,0
0,0
0,5
1,0
1,5
2,0
2,5
Vout [V]
I
Maximum
Typical high
Typical low
Minimum
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