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| 型號： | HYB25D128400ATL-8 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 128 Mbit Double Data Rate SDRAM |
| 中文描述： | 128兆雙倍數(shù)據(jù)速率SDRAM |
| 文件頁數(shù)： | 48/79頁 |
| 文件大?。?/td> | 2596K |
| 代理商： | HYB25D128400ATL-8 |
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Read
HYB25D128[400/800/160]A-[6/7/8]
128Mbit Double Data Rate SDRAM
Functional Description
Data Sheet
48
Rev. 1.06, 2004-01
09192003-LFQ1-R60G
11) Requires appropriate DM masking.
Table 9
Current State
Any
Truth Table 4: Current State Bank
n
- Command to Bank m (different bank)
CS
RAS CAS WE
Command
H
X
X
X
Deselect
Action
NOP. Continue previous
operation.
NOP. Continue previous
operation.
–
Notes
1) to 6)
2)3)4)5)6)
L
H
H
H
No Operation
1) to 6)
Idle
X
X
X
X
Any Command
Otherwise Allowed
to Bank m
Active
Read
1) to 6)
Row Activating,
Active, or
Precharging
L
L
L
H
H
L
H
H
Select and activate row
Select column and start
Read burst
Select column and start Write
burst
–
Select and activate row
Select column and start new
Read burst
–
Select and activate row
Select column and start Read
burst
Select column and start new
Write burst
–
Select and activate row
Select column and start new
Read burst
Select column and start Write
burst
–
Select and activate row
Select column and start Read
burst
Select column and start new
Write burst
–
1) to 6)
1) to 7)
L
H
L
L
Write
1) to 7)
L
L
L
L
L
H
H
H
L
L
H
H
Precharge
Active
Read
1) to 6)
Read (Auto
Precharge
Disabled)
1) to 6)
1) to 7)
L
L
L
L
L
H
H
H
L
L
H
H
Precharge
Active
1) to 6)
Write (Auto
Precharge
Disabled)
1) to 6)
1) to 8)
L
H
L
L
Write
1) to 7)
L
L
L
L
L
H
H
H
L
L
H
H
Precharge
Active
Read
1) to 6)
Read (With Auto
Precharge)
1) to 6)
1) to 7), 10)
9)
L
H
L
L
Write
1) to 7), 9), 10)
L
L
L
L
L
H
H
H
L
L
H
H
Precharge
Active
Read
1) to 6)
Write (With Auto
Precharge)
1) to 6)
1) to 7), 9)
L
H
L
L
Write
1) to 7), 9)
L
L
H
L
Precharge
1) to 6)
1) This table applies when CKE n-1 was HIGH and CKE n is HIGH (see
Table 7
: Clock Enable (CKE) and after
t
XSNR
/
t
XSRD
has been met (if the previous state was self refresh).
2) This table describes alternate bank operation, except where noted, i.e., the current state is for bank n and the commands
shown are those allowed to be issued to bank m (assuming that bank m is in such a state that the given command is
allowable). Exceptions are covered in the notes below.
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| HYB25D128400C | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:128-Mbit Double-Data-Rate SDRAM |
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| HYB25D128400CE-6 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128 Mbit Double Data Rate SDRAM |
| HYB25D128400CE-7 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:128-Mbit Double-Data-Rate SDRAM |
| HYB25D128400CT-7 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128 Mbit Double Data Rate SDRAM |
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