參數(shù)資料
型號: HYB25D128323CL-4.5
廠商: INFINEON TECHNOLOGIES AG
英文描述: 128 Mbit DDR SGRAM
中文描述: 128兆的DDR SGRAM
文件頁數(shù): 48/53頁
文件大?。?/td> 1166K
代理商: HYB25D128323CL-4.5
HYB25D128323C[-3/-3.3/-3.6/-4.5/-5.0/L3.6/L4.5]
128 Mbit DDR SGRAM [4M x 32]
Electrical Characteristics
Data Sheet
48
V1.7, 2003-07
Internal WRITE to READ command delay
Write DQS High level Width
Write DQS Low level Width
t
WTR
t
DQSH
t
DQSL
1
0.35
0.35
0.65
0.65
1
0.35
0.35
0.65
0.65
t
CK
t
CK
t
CK
Refresh Cycle
Refresh Period (4096 cycles)
Average periodic refresh interval
Refresh to Refresh command interval
t
REF
t
REFC
t
REFC
32
7.8
15.7
32
7.8
15.7
ms
us
us
Mode Setup, Power Down & Self Refresh
Mode Register Set cycle time
Self Refresh Exit time
Power Down Exit time
t
MRD
t
SREX
t
PDEX
2
200
2*
t
CK
+
t
IS
2
200
1*
t
CK
+
t
IS
t
CK
t
CK
ns
1) All parameters only valid for:
T
A
= 0 to 70 °C;
V
SS
= 0 V; 2.375 V <
V
DD
< 2.9 V for L3.6;
V
DD
= 2.5 V
±
0.125 V for L4.5;
V
DDQ
= 2.5 V
±
0.125 V
2) Maximum clock rate is only guaranteed with the specified interface. The SSTL2-Weak Mode interface is limited to a
maximum speed of 250MHz.
3) The Write Recovery Time starts at the first rising edge of clock after the last valid (falling) DQS edge of the slowest DQS
signal.
Table 19
Frequency /
t
CK
333 MHz / 3.0 ns
HYB25D128323C–3
CAS latency
4
t
RC
13
t
RFC
15
t
RAS
9
t
RP
4
t
WR
2
t
RRD
3
t
DAL
6
t
RCDRD
4
t
RCDWR
2
Units
t
CK
300 MHz / 3.3 ns
4
13
15
9
4
2
3
6
4
2
t
CK
278 MHz / 3.6 ns
4
13
15
9
4
2
3
6
4
2
t
CK
250 MHz / 4.0 ns
3
12
14
8
4
2
3
6
3
2
t
CK
222 MHz / 4.5 ns
3
10
12
7
3
2
2
5
3
2
t
CK
200 MHz / 5.0 ns
3
9
11
6
3
2
2
5
3
2
t
CK
Table 18
Part Number Extension
Interface
Parameter
Timing Parameters for speed sorts L3.6 and L4.5
(cont’d)
L3.6
MIM
L4.5
WM/MIM
min.
Unit Note
1)
2)
Symbol min.
max.
max.
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