- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371770 > HAT2114RJ (Renesas Technology Corp.) Silicon N Channel Power MOS FET High Speed Power Switching PDF資料下載
參數(shù)資料
| 型號： | HAT2114RJ |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel Power MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道功率MOS FET的高速電源開關(guān) |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 118K |
| 代理商： | HAT2114RJ |
HAT2114R, HAT2114RJ
Rev.1.00, Oct.06.2003, page 3 of 9
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to Source breakdown voltage V
(BR)GSS
±20
—
—
V
μ
A
μ
A
μ
A
μ
A
V
I
G
= ±100
μ
A, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
Zero gate voltage drain current
I
DSS
—
—
1
Zero gate voltage
HAT2114R
I
DSS
—
—
—
V
DS
= 48 V, V
GS
= 0
Ta = 125
°
C
V
GS
= ±16 V, V
DS
= 0
drain current
HAT2114RJ I
DSS
—
—
10
Gate to source leak current
I
GSS
—
—
±10
Gate to source cutoff voltage
V
GS(off)
1.5
—
2.5
V
DS
= 10 V, I
D
= 1 mA
I
D
= 3 A
Note5
, V
DS
= 10 V
I
D
= 3 A
Note5
, V
GS
= 10 V
I
D
= 3 A
Note5
, V
GS
= 4.5 V
Forward transfer admittance
|y
fs
|
6
9.5
—
S
m
m
pF
Static drain to source on state
R
DS(on)
—
28
32
resistance
R
DS(on)
—
40
50
Input capacitance
Ciss
—
1000
—
V
DS
= 10V, V
GS
= 0
Output capacitance
Coss
—
145
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
85
—
pF
Total gate charge
Qg
—
15
—
nC
V
DD
= 25 V
Gate to source charge
Qgs
—
2
—
nC
V
GS
= 10 V
Gate to drain charge
Qgd
—
3
—
nC
I
D
= 6A
Turn-on delay time
td(on)
—
12
—
ns
V
GS
= 10 V, I
D
= 3 A
V
DD
30 V
R
L
= 10
R
G
=4.7
I
F
= 6 A, V
GS
= 0
Note5
Rise time
tr
—
10
—
ns
Turn-off delay time
td(off)
—
60
—
ns
Fall time
tf
—
11
—
ns
Body-drain diode forward voltage
V
DF
—
0.82
1.07
V
Body-drain diode reverse recovery
time
Notes: 5. Pulse test
trr
—
40
—
ns
I
F
= 6A, V
GS
= 0
diF/dt = 100 A/μs
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HAT2129H-EL-E | Silicon N Channel Power MOS FET Power Switching |
| HAT2160H | Silicon N Channel Power MOS FET Power Switching |
| HAT2160H-EL-E | Silicon N Channel Power MOS FET Power Switching |
| HAT2164H | Silicon N Channel Power MOS FET Power Switching |
| HAT2165H | Silicon N Channel Power MOS FET Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAT2114RJ-EL-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 6A 8-Pin SOP Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 6A 8-Pin SOP |
| HAT2116H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| HAT2116H-EL-E | 功能描述:MOSFET N-CH 30V 30A LFPAK RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設(shè)備封裝:TO-220FP 包裝:管件 |
| HAT2119H | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| HAT2119H-EL-E | 制造商:Renesas Electronics Corporation 功能描述:HAT2119H-EL-E - Tape and Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。