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參數(shù)資料
| 型號： | HAT2129H-EL-E |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel Power MOS FET Power Switching |
| 中文描述： | 硅?通道功率MOS場效應(yīng)管電源開關(guān) |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 94K |
| 代理商： | HAT2129H-EL-E |
Rev.5.00 Sep 20, 2005 page 1 of 7
HAT2129H
Silicon N Channel Power MOS FET
Power Switching
REJ03G0049-0500
Rev.5.00
Sep 20, 2005
Features
Capable of 7 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 6 m
typ. (at V
GS
= 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
1234
5
1, 2, 3 Source
4 Gate
5 Drain
G
D
S S S
1 2 3
4
5
Absolute Maximum Ratings
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°
C
°
C
Item
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP
Note 3
E
AR
Note 3
Pch
Note2
Tch
Tstg
Ratings
40
±20
30
120
30
20
32
20
150
–55 to +150
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
≥
50
Note1
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| HAT2134H | 功能描述:MOSFET N-CH 20V 60A 5LFPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| HAT2134H-EL-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 20V 60A 5-Pin(4+Tab) LFPAK T/R |
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