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參數(shù)資料
| 型號(hào)： | HAT2129H-EL-E |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel Power MOS FET Power Switching |
| 中文描述： | 硅?通道功率MOS場(chǎng)效應(yīng)管電源開關(guān) |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 94K |
| 代理商： | HAT2129H-EL-E |
HAT2129H
Rev.5.00 Sep 20, 2005 page 2 of 7
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
40
±20
—
—
2.0
—
—
24
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
6.0
7.0
40
3200
450
260
46
13.5
7.5
22
33
67
11
0.84
50
Max
—
—
±10
1
3.5
7.5
9.5
—
—
—
—
—
—
—
—
—
—
—
1.10
—
Unit
V
V
μ
A
μ
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
= ±100
μ
A, V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
V
DS
= 40 V, V
GS
= 0
V
DS
= 10 V,
I
D
= 1 mA
I
D
= 15 A, V
GS
= 10 V
Note4
I
D
= 15 A, V
GS
= 7 V
Note4
I
D
= 15 A, V
DS
= 10 V
Note4
V
DS
= 10 V, V
GS
= 0, f = 1 MHz
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
V
DD
= 10 V, V
GS
= 10 V, I
D
= 30 A
V
GS
= 10 V, I
D
= 15 A,
V
DD
10 V, R
L
= 0.67
,
Rg = 4.7
IF = 30 A, V
GS
= 0
Note4
IF = 30 A, V
GS
= 0
di
F
/ dt = 50 A/
μ
s
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| HAT2131R | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching |
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| HAT2134H | 功能描述:MOSFET N-CH 20V 60A 5LFPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| HAT2134H-EL-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 20V 60A 5-Pin(4+Tab) LFPAK T/R |
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