參數(shù)資料
型號: GS8182T36BGD-333IT
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 512K X 36 DDR SRAM, 0.45 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件頁數(shù): 34/37頁
文件大?。?/td> 562K
代理商: GS8182T36BGD-333IT
Pin Description Table
Symbol
Description
Type
Comments
SA
Synchronous Address Inputs
Input
R/W
Read/Write Control Pin
Input
Write Active Low; Read Active High
BW0–BW3
Synchronous Byte Writes
Input
Active Low
x18/x36 only
NW0–NW1
Nybble Write Control Pin
Input
Active Low
x8 only
BW
Byte Write Control Pin
Input
Active Low
x9 only
LD
Synchronous Load Pin
Input
Active Low
K
Input Clock
Input
Active High
K
Input Clock
Input
Active Low
C
Output Clock
Input
Active High
C
Output Clock
Input
Active Low
TMS
Test Mode Select
Input
TDI
Test Data Input
Input
TCK
Test Clock Input
Input
TDO
Test Data Output
Output
VREF
HSTL Input Reference Voltage
Input
ZQ
Output Impedance Matching Input
Input
DQ
Data I/O
Input/Output
Three State
Doff
Disable DLL when low
Input
Active Low
CQ
Output Echo Clock
Output
CQ
Output Echo Clock
Output
VDD
Power Supply
Supply
1.8 V Nominal
VDDQ
Isolated Output Buffer Supply
Supply
1.5 V or 1.8 V Nominal
VSS
Power Supply: Ground
Supply
NC
No Connect
GS8182T08/09/18/36BD-400/375/333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04b 6/2010
6/37
2007, GSI Technology
Notes:
1. NC = Not Connected to die or any other pin
2. When ZQ pin is directly connected to VDDQ, output impedance is set to minimum value and it cannot be connected to ground or left
unconnected.
3. C, C, K, K cannot be set to VREF voltage.
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