參數(shù)資料
型號: FTS64K
廠商: 飛思卡爾半導體(中國)有限公司
英文描述: 50/MDR/RECP/VERT PRS FIT/M2.6/SCW/30 MIN
中文描述: 64K的快閃記憶體字節(jié)
文件頁數(shù): 9/44頁
文件大?。?/td> 401K
代理商: FTS64K
FTS64K Block User Guide — Version V01.00
9
Section 1 Introduction
1.1 Overview
This document describes the FTS64K module which is a 64k byte Flash (Non-Volatile) Memory. The
Flash array is organized as 1 block of 64k bytes organized as 1024 rows of 64 bytes. The Flash block’s
erase sector size is 8 rows (512 bytes).
The Flash memory may be read as either bytes, aligned words or misaligned words. Read access time is
one bus cycle for byte and aligned word, and two bus cycles for misaligned words.
Program and erase functions are controlled by a command driven interface. Both sector erase and mass
erase of the entire 64k byte Flash block are supported. An erased bit reads ’1’ and a programmed bit reads
’0’. The high voltage required to program and erase is generated internally by on-chip charge pumps.
It is not possible to read from the Flash block while it is being erased or programmed.
The Flash is ideal for program and data storage for single-supply applications allowing for field
reprogramming without requiring external programming voltage sources.
WARNING
A word must be erased before being programmed. Cumulative programming of bits within a word
is not allowed.
1.1.1 Glossary
Command Sequence
A three-step MCU instruction sequence to program, erase or erase-verify a Flash block.
1.2 Features
64k bytes of Flash memory.
Automated program and erase algorithm.
Interrupts on Flash command completion and command buffer empty.
Fast sector erase and word program operation.
2-stage command pipeline
Flexible protection scheme for protection against accidental program or erase.
Single power supply program and erase.
Security feature.
F
For More Information On This Product,
Go to: www.freescale.com
n
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