參數(shù)資料
型號: FS7VS-5
廠商: Mitsubishi Electric Corporation
英文描述: HIGH-SPEED SWITCHING USE
中文描述: 高速開關(guān)使用
文件頁數(shù): 19/91頁
文件大?。?/td> 488K
代理商: FS7VS-5
PSD9XX Family
PSD935G2
18
The
PSD935G2
Functional
Blocks
(cont.)
FS0-7
or
CSBOOT0-3
Instruction
Cycle 1 Cycle 2 Cycle 3
Cycle 4
Cycle5
Cycle 6
Cycle 7
Read (Note 5)
1
Read
RA RD
Read Main Flash ID
(Notes 6,13)
1
AAh
@555h
55h
90h
@555h
Read
ID
@x01h
@AAAh
Read Sector Protection
(Notes 6,8,13)
1
AAh
@555h
55h
90h
@555h
Read
00h or 01h
@x02h
@AAAh
Program a Flash Byte
1
AAh
@555h
55h
A0h
@555h
PD@PA
@AAAh
Erase One Flash Sector
1
AAh
@555h
55h
80h
@555h
AAh
@555h
55h
30h
@SA
30h
@AAAh
@AAAh
@next SA
(Note 7)
Erase Flash Block
(Bulk Erase)
1
AAh
@555h
55h
80h
@555h
AAh
@555h
55h
10h
@555h
@AAAh
@AAAh
Suspend Sector Erase
(Note 11)
1
B0h
@xxxh
Resume Sector Erase
(Note 12)
1
30h
@xxxh
Reset (Note 6)
1
F0 @ any
address
Unlock Bypass
1
AAh
@555h
55h
20h
@555h
@AAAh
Unlock Bypass Program
(Note 9)
1
A0h
@xxxh
PD@PA
Unlock Bypass Reset
(Note 10)
1
90h
@xxxh
00h
@xxxh
Table 9. Instructions
X
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WR#
(CNTL0) pulse.
PD = Data to be programmed at location PA. Data is latched o the rising edge of WR# (CNTL0) pulse.
SA = Address of the sector to be erased or verified. The chip select (FS0-7 or CSBOOT0-3) of the sector to be
erased must be active (high).
= Don
t Care.
NOTES:
1.
All bus cycles are write bus cycle except the ones with the
read
label.
2.
All values are in hexadecimal.
3.
FS0-7 and CSBOOT0-3 are active high and are defined in PSDsoft.
4.
Only Address bits A11-A0 are used in Instruction decoding. A15-12 (or A16-A12) are don
t care.
5.
No unlock or command cycles required when device is in read mode.
6.
The Reset command is required to return to the read mode after reading the Flash ID, Sector Protect status
or if DQ5 (error flag) goes high.
7.
Additional sectors to be erased must be entered within 80μs.
8.
The data is 00h for an unprotected sector and 01h for a protected sector. In the fourth cycle, the sector chip
select is active and (A1 = 1, A0 = 0).
9.
The Unlock Bypass command is required prior to the Unlock Bypass Program command.
10. The Unlock Bypass Reset command is required to return to reading array data when the device is in the
Unlock Bypass mode.
11. The system may read and program functions in non-erasing sectors, read the Flash ID or read the Sector
Protect status, when in the Erase Suspend mode. The erase Suspend command is valid only during a sector
erase operation.
12. The Erase Resume command is valid only during the Erase Suspend mode.
13. The MCU cannot invoke these instructions while executing code from the same Flash memory for which the
instruction is intended. The MCU must fetch, for example, codes from the secondary block when reading the
Sector Protection Status of the main Flash.
相關(guān)PDF資料
PDF描述
PSD935F3V-15B81 Configurable Memory System on a Chip for 8-Bit Microcontrollers
PSD935F3V-15B81I Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 30000uF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-0.1pF; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder Coated (Sn/Pb, 70/30); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate
PSD935F3V-15J Configurable Memory System on a Chip for 8-Bit Microcontrollers
PSD935F3V-15JI Configurable Memory System on a Chip for 8-Bit Microcontrollers
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